JPS5491066A - Field effect transistor of insulation gate type - Google Patents
Field effect transistor of insulation gate typeInfo
- Publication number
- JPS5491066A JPS5491066A JP15794877A JP15794877A JPS5491066A JP S5491066 A JPS5491066 A JP S5491066A JP 15794877 A JP15794877 A JP 15794877A JP 15794877 A JP15794877 A JP 15794877A JP S5491066 A JPS5491066 A JP S5491066A
- Authority
- JP
- Japan
- Prior art keywords
- drain
- layer
- gate
- type
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain higher drain dielectric strength by forming a gate oxidized film to a thickness of less than 1000Å.
CONSTITUTION: After P-type substrate 41 is provided with SiO2 42, channel stopper 43 is diffusion-formed; and thick SiO2 is formed partially by a LOCOS method using a nitride film and the nitride film is removed. By using resist mask 45, phosphorus ions are injected to form N--type layers 46 and 47. Next, the mask is removed and the surface is covered with poly-Si, which is selectively removed to form gate 48. Through film 42, ions are injected to form N+-type source 49 and drain 50. Lastly, ohmic electrode wiring is attained by a normal method and the process is completed. In this structure, since the drain layer right under the easy-to-expand gate electrode of a depletion layer is N--type layer 46 when a voltage is applied to the drain with the gate grounded, the depletion layer expands not only toward the substrate, but also in the direction of layer 46, so that high drain dielectric strength can be obtained.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15794877A JPS5491066A (en) | 1977-12-28 | 1977-12-28 | Field effect transistor of insulation gate type |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15794877A JPS5491066A (en) | 1977-12-28 | 1977-12-28 | Field effect transistor of insulation gate type |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5491066A true JPS5491066A (en) | 1979-07-19 |
Family
ID=15660957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15794877A Pending JPS5491066A (en) | 1977-12-28 | 1977-12-28 | Field effect transistor of insulation gate type |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5491066A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6194365A (en) * | 1984-10-16 | 1986-05-13 | Oki Electric Ind Co Ltd | High withstanding-voltage mos field-effect semiconductor device |
JPH02136340U (en) * | 1989-04-18 | 1990-11-14 |
-
1977
- 1977-12-28 JP JP15794877A patent/JPS5491066A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6194365A (en) * | 1984-10-16 | 1986-05-13 | Oki Electric Ind Co Ltd | High withstanding-voltage mos field-effect semiconductor device |
JPH02136340U (en) * | 1989-04-18 | 1990-11-14 |
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