JPS56138951A - Manufacture of semiconductor memory device - Google Patents

Manufacture of semiconductor memory device

Info

Publication number
JPS56138951A
JPS56138951A JP4175080A JP4175080A JPS56138951A JP S56138951 A JPS56138951 A JP S56138951A JP 4175080 A JP4175080 A JP 4175080A JP 4175080 A JP4175080 A JP 4175080A JP S56138951 A JPS56138951 A JP S56138951A
Authority
JP
Japan
Prior art keywords
oxide film
boron ions
polysilicon
layer
polysilicon electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4175080A
Other languages
Japanese (ja)
Other versions
JPS6317229B2 (en
Inventor
Akira Takei
Takashi Mitsuida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4175080A priority Critical patent/JPS56138951A/en
Publication of JPS56138951A publication Critical patent/JPS56138951A/en
Publication of JPS6317229B2 publication Critical patent/JPS6317229B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD

Abstract

PURPOSE:To obtain a CCD having preferable transfer efficiency by injecting boron ions after forming an oxide film or increasing the thickness of the oxide film, thereby matching the threshold voltage of the barrier. CONSTITUTION:A thin oxide film 14 is formed on the surface of a P<-> type semiconductor substrate 13, the first layer polysilicon layer is covered by a CVD process, and polysilicon electrodes 11a, 11b,... of the first layer are formed. With the polysilicon electrodes as masks boron ions are injected to form a barrier region 15. Thereafter, an oxide film and the second polysilicon layer are formed, patterned, and the second polysilicon electrodes 12b, 12d... are formed. Subsequently, an oxide film 17 is formed, boron ions are injected, and the boron concentration of the barrier region 15 is matched. Then, the third polysilicon electrodes 12a, 12c... are formed. The thickness of the oxide film may be increased instead of injecting the boron ions.
JP4175080A 1980-03-31 1980-03-31 Manufacture of semiconductor memory device Granted JPS56138951A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4175080A JPS56138951A (en) 1980-03-31 1980-03-31 Manufacture of semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4175080A JPS56138951A (en) 1980-03-31 1980-03-31 Manufacture of semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS56138951A true JPS56138951A (en) 1981-10-29
JPS6317229B2 JPS6317229B2 (en) 1988-04-13

Family

ID=12617090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4175080A Granted JPS56138951A (en) 1980-03-31 1980-03-31 Manufacture of semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS56138951A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6378961A (en) * 1986-09-22 1988-04-09 日本ゼオン株式会社 Vibration control composite floor material
JPS6378960A (en) * 1986-09-22 1988-04-09 日本ゼオン株式会社 Sound insulating floor material
JPH0272733U (en) * 1988-11-25 1990-06-04
JPH02105438U (en) * 1989-02-10 1990-08-22

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5275190A (en) * 1975-12-18 1977-06-23 Toshiba Corp Production of 4-phase drive charge coupling device
JPS5349961A (en) * 1976-10-15 1978-05-06 Fairchild Camera Instr Co Semiconductor element structure and method of producing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5275190A (en) * 1975-12-18 1977-06-23 Toshiba Corp Production of 4-phase drive charge coupling device
JPS5349961A (en) * 1976-10-15 1978-05-06 Fairchild Camera Instr Co Semiconductor element structure and method of producing same

Also Published As

Publication number Publication date
JPS6317229B2 (en) 1988-04-13

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