JPS5275190A - Production of 4-phase drive charge coupling device - Google Patents

Production of 4-phase drive charge coupling device

Info

Publication number
JPS5275190A
JPS5275190A JP15018875A JP15018875A JPS5275190A JP S5275190 A JPS5275190 A JP S5275190A JP 15018875 A JP15018875 A JP 15018875A JP 15018875 A JP15018875 A JP 15018875A JP S5275190 A JPS5275190 A JP S5275190A
Authority
JP
Japan
Prior art keywords
production
coupling device
phase drive
charge coupling
drive charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15018875A
Other languages
Japanese (ja)
Inventor
Nobuo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15018875A priority Critical patent/JPS5275190A/en
Publication of JPS5275190A publication Critical patent/JPS5275190A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76891—Four-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To increase the scale of integration by providing first and second transfer electrodes to be applied with the same transfer pulse, alternately on a semiconductor substrate, providing third transfer electrodes in every other spacing therebetween and further providing fouth transfer electrodes in every other spacings between the electrodes.
JP15018875A 1975-12-18 1975-12-18 Production of 4-phase drive charge coupling device Pending JPS5275190A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15018875A JPS5275190A (en) 1975-12-18 1975-12-18 Production of 4-phase drive charge coupling device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15018875A JPS5275190A (en) 1975-12-18 1975-12-18 Production of 4-phase drive charge coupling device

Publications (1)

Publication Number Publication Date
JPS5275190A true JPS5275190A (en) 1977-06-23

Family

ID=15491427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15018875A Pending JPS5275190A (en) 1975-12-18 1975-12-18 Production of 4-phase drive charge coupling device

Country Status (1)

Country Link
JP (1) JPS5275190A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5680166A (en) * 1979-12-04 1981-07-01 Fujitsu Ltd Charge-coupled memory device
JPS56138951A (en) * 1980-03-31 1981-10-29 Fujitsu Ltd Manufacture of semiconductor memory device
US5019884A (en) * 1989-04-07 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Charge transfer device
JPH05152559A (en) * 1991-11-27 1993-06-18 Matsushita Electron Corp Solid-state imaging device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5680166A (en) * 1979-12-04 1981-07-01 Fujitsu Ltd Charge-coupled memory device
JPS56138951A (en) * 1980-03-31 1981-10-29 Fujitsu Ltd Manufacture of semiconductor memory device
JPS6317229B2 (en) * 1980-03-31 1988-04-13 Fujitsu Ltd
US5019884A (en) * 1989-04-07 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Charge transfer device
JPH05152559A (en) * 1991-11-27 1993-06-18 Matsushita Electron Corp Solid-state imaging device

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