JPS5297682A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS5297682A
JPS5297682A JP1462176A JP1462176A JPS5297682A JP S5297682 A JPS5297682 A JP S5297682A JP 1462176 A JP1462176 A JP 1462176A JP 1462176 A JP1462176 A JP 1462176A JP S5297682 A JPS5297682 A JP S5297682A
Authority
JP
Japan
Prior art keywords
electrodes
transfer device
charge transfer
making
insulator film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1462176A
Other languages
Japanese (ja)
Inventor
Takamichi Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1462176A priority Critical patent/JPS5297682A/en
Publication of JPS5297682A publication Critical patent/JPS5297682A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76891—Four-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To improve transfer efficiency considerably by making the insulator film under cecond electrodes thicker than the insulator film under first electrodes of a CCD and making the amplituder of the clock voltage to ve applied to the second electrodes smaller than that of the clock voltage to be applied to the first electrodes.
JP1462176A 1976-02-12 1976-02-12 Charge transfer device Pending JPS5297682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1462176A JPS5297682A (en) 1976-02-12 1976-02-12 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1462176A JPS5297682A (en) 1976-02-12 1976-02-12 Charge transfer device

Publications (1)

Publication Number Publication Date
JPS5297682A true JPS5297682A (en) 1977-08-16

Family

ID=11866269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1462176A Pending JPS5297682A (en) 1976-02-12 1976-02-12 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS5297682A (en)

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