JPS5275189A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS5275189A
JPS5275189A JP13633975A JP13633975A JPS5275189A JP S5275189 A JPS5275189 A JP S5275189A JP 13633975 A JP13633975 A JP 13633975A JP 13633975 A JP13633975 A JP 13633975A JP S5275189 A JPS5275189 A JP S5275189A
Authority
JP
Japan
Prior art keywords
electrodes
conductivity type
transfer device
charge transfer
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13633975A
Other languages
Japanese (ja)
Inventor
Yutaka Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP13633975A priority Critical patent/JPS5275189A/en
Publication of JPS5275189A publication Critical patent/JPS5275189A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To increase density through reduction in electrode width and simplification of wiring between electrodes by providing first regions of the conductivity type reverse from the conductivity type of a semiconductor substrate so as to bridge between electrodes and high impurity second regions of the same conductivity type as the substrate on the side face of this region and under the electrodes.
JP13633975A 1975-11-14 1975-11-14 Charge transfer device Pending JPS5275189A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13633975A JPS5275189A (en) 1975-11-14 1975-11-14 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13633975A JPS5275189A (en) 1975-11-14 1975-11-14 Charge transfer device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP783977A Division JPS52109879A (en) 1977-01-28 1977-01-28 Formating method of matching domain

Publications (1)

Publication Number Publication Date
JPS5275189A true JPS5275189A (en) 1977-06-23

Family

ID=15172886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13633975A Pending JPS5275189A (en) 1975-11-14 1975-11-14 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS5275189A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5286987A (en) * 1991-11-26 1994-02-15 Sharp Kabushiki Kaisha Charge transfer device
JP2002110961A (en) * 2000-09-26 2002-04-12 New Japan Radio Co Ltd Method of manufacturing charge-coupled element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5286987A (en) * 1991-11-26 1994-02-15 Sharp Kabushiki Kaisha Charge transfer device
US5385860A (en) * 1991-11-26 1995-01-31 Sharp Kabushiki Kaisha Charge transfer device
JP2002110961A (en) * 2000-09-26 2002-04-12 New Japan Radio Co Ltd Method of manufacturing charge-coupled element
JP4562890B2 (en) * 2000-09-26 2010-10-13 新日本無線株式会社 Method for manufacturing charge coupled device

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