JPS52109879A - Formating method of matching domain - Google Patents

Formating method of matching domain

Info

Publication number
JPS52109879A
JPS52109879A JP783977A JP783977A JPS52109879A JP S52109879 A JPS52109879 A JP S52109879A JP 783977 A JP783977 A JP 783977A JP 783977 A JP783977 A JP 783977A JP S52109879 A JPS52109879 A JP S52109879A
Authority
JP
Japan
Prior art keywords
inpurity
matching domain
opening
introducing
formating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP783977A
Other languages
Japanese (ja)
Other versions
JPS562423B2 (en
Inventor
Yutaka Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP783977A priority Critical patent/JPS52109879A/en
Publication of JPS52109879A publication Critical patent/JPS52109879A/en
Publication of JPS562423B2 publication Critical patent/JPS562423B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To enable the matching area with small dimension independently of the photo etching method, by forming the opening to the mask containing inpurity provided on the base, further by providing the second inpurity introducing mask in it, and by introducing the inpurity after narrowing the width of the opening with the exposure and photo etching from the tilt angle by coating the photo sensitive resin.
JP783977A 1977-01-28 1977-01-28 Formating method of matching domain Granted JPS52109879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP783977A JPS52109879A (en) 1977-01-28 1977-01-28 Formating method of matching domain

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP783977A JPS52109879A (en) 1977-01-28 1977-01-28 Formating method of matching domain

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP13633975A Division JPS5275189A (en) 1975-11-14 1975-11-14 Charge transfer device

Publications (2)

Publication Number Publication Date
JPS52109879A true JPS52109879A (en) 1977-09-14
JPS562423B2 JPS562423B2 (en) 1981-01-20

Family

ID=11676767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP783977A Granted JPS52109879A (en) 1977-01-28 1977-01-28 Formating method of matching domain

Country Status (1)

Country Link
JP (1) JPS52109879A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924366A (en) * 1972-06-28 1974-03-04
JPS5046488A (en) * 1973-08-14 1975-04-25

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924366A (en) * 1972-06-28 1974-03-04
JPS5046488A (en) * 1973-08-14 1975-04-25

Also Published As

Publication number Publication date
JPS562423B2 (en) 1981-01-20

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