JPS5260081A - Complementary type field effect semiconductor device - Google Patents

Complementary type field effect semiconductor device

Info

Publication number
JPS5260081A
JPS5260081A JP50135873A JP13587375A JPS5260081A JP S5260081 A JPS5260081 A JP S5260081A JP 50135873 A JP50135873 A JP 50135873A JP 13587375 A JP13587375 A JP 13587375A JP S5260081 A JPS5260081 A JP S5260081A
Authority
JP
Japan
Prior art keywords
semiconductor device
field effect
type field
complementary type
effect semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50135873A
Other languages
Japanese (ja)
Inventor
Keiji Watanabe
Yoshiaki Yadoiwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP50135873A priority Critical patent/JPS5260081A/en
Publication of JPS5260081A publication Critical patent/JPS5260081A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the variatin in threshold voltage by using a polycrystalline Si layer containing P as gate electrode in a C-FET having different conductivity type FETs within the same semiconductor substrate.
JP50135873A 1975-11-12 1975-11-12 Complementary type field effect semiconductor device Pending JPS5260081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50135873A JPS5260081A (en) 1975-11-12 1975-11-12 Complementary type field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50135873A JPS5260081A (en) 1975-11-12 1975-11-12 Complementary type field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5260081A true JPS5260081A (en) 1977-05-18

Family

ID=15161757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50135873A Pending JPS5260081A (en) 1975-11-12 1975-11-12 Complementary type field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5260081A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225663A (en) * 1982-06-23 1983-12-27 Toshiba Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225663A (en) * 1982-06-23 1983-12-27 Toshiba Corp Manufacture of semiconductor device

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