JPS5279840A - Operation of nonvolatile semiconductor memory element - Google Patents

Operation of nonvolatile semiconductor memory element

Info

Publication number
JPS5279840A
JPS5279840A JP15890075A JP15890075A JPS5279840A JP S5279840 A JPS5279840 A JP S5279840A JP 15890075 A JP15890075 A JP 15890075A JP 15890075 A JP15890075 A JP 15890075A JP S5279840 A JPS5279840 A JP S5279840A
Authority
JP
Japan
Prior art keywords
semiconductor memory
memory element
nonvolatile semiconductor
voltage
base plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15890075A
Other languages
Japanese (ja)
Inventor
Hisaaki Aizaki
Kiyoshi Sugibuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15890075A priority Critical patent/JPS5279840A/en
Publication of JPS5279840A publication Critical patent/JPS5279840A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To lower the voltage of gate for electric charge input with reducing the saturation of surface opential on base plate, by applying the inverse bias voltage less than avalanche surrender voltage between both source and drain and semiconductor base plate.
JP15890075A 1975-12-26 1975-12-26 Operation of nonvolatile semiconductor memory element Pending JPS5279840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15890075A JPS5279840A (en) 1975-12-26 1975-12-26 Operation of nonvolatile semiconductor memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15890075A JPS5279840A (en) 1975-12-26 1975-12-26 Operation of nonvolatile semiconductor memory element

Publications (1)

Publication Number Publication Date
JPS5279840A true JPS5279840A (en) 1977-07-05

Family

ID=15681810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15890075A Pending JPS5279840A (en) 1975-12-26 1975-12-26 Operation of nonvolatile semiconductor memory element

Country Status (1)

Country Link
JP (1) JPS5279840A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57135495A (en) * 1981-02-13 1982-08-21 Citizen Watch Co Ltd Mnos storage element
JPS58139394A (en) * 1982-02-10 1983-08-18 Agency Of Ind Science & Technol Write method for non-volatile semiconductor memory

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57135495A (en) * 1981-02-13 1982-08-21 Citizen Watch Co Ltd Mnos storage element
JPS58139394A (en) * 1982-02-10 1983-08-18 Agency Of Ind Science & Technol Write method for non-volatile semiconductor memory
JPH0423429B2 (en) * 1982-02-10 1992-04-22 Kogyo Gijutsuin

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