JPS51123574A - Semiconductor switching device - Google Patents

Semiconductor switching device

Info

Publication number
JPS51123574A
JPS51123574A JP4882375A JP4882375A JPS51123574A JP S51123574 A JPS51123574 A JP S51123574A JP 4882375 A JP4882375 A JP 4882375A JP 4882375 A JP4882375 A JP 4882375A JP S51123574 A JPS51123574 A JP S51123574A
Authority
JP
Japan
Prior art keywords
switching device
semiconductor switching
withstand voltage
device designed
high withstand
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4882375A
Other languages
Japanese (ja)
Other versions
JPS5629388B2 (en
Inventor
Akira Kawakami
Hiroshi Gamo
Katsuhiro Oda
Yahei Takase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4882375A priority Critical patent/JPS51123574A/en
Publication of JPS51123574A publication Critical patent/JPS51123574A/en
Publication of JPS5629388B2 publication Critical patent/JPS5629388B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:Semiconductor switching device designed for relative high withstand voltage, and which is provided with improved switching characteristics.
JP4882375A 1975-04-22 1975-04-22 Semiconductor switching device Granted JPS51123574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4882375A JPS51123574A (en) 1975-04-22 1975-04-22 Semiconductor switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4882375A JPS51123574A (en) 1975-04-22 1975-04-22 Semiconductor switching device

Publications (2)

Publication Number Publication Date
JPS51123574A true JPS51123574A (en) 1976-10-28
JPS5629388B2 JPS5629388B2 (en) 1981-07-08

Family

ID=12813932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4882375A Granted JPS51123574A (en) 1975-04-22 1975-04-22 Semiconductor switching device

Country Status (1)

Country Link
JP (1) JPS51123574A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01228173A (en) * 1988-03-09 1989-09-12 Hitachi Ltd Thyristor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH047434Y2 (en) * 1987-01-16 1992-02-27

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01228173A (en) * 1988-03-09 1989-09-12 Hitachi Ltd Thyristor

Also Published As

Publication number Publication date
JPS5629388B2 (en) 1981-07-08

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