JPS51147159A - Semiconductor direct oscillator - Google Patents

Semiconductor direct oscillator

Info

Publication number
JPS51147159A
JPS51147159A JP7134875A JP7134875A JPS51147159A JP S51147159 A JPS51147159 A JP S51147159A JP 7134875 A JP7134875 A JP 7134875A JP 7134875 A JP7134875 A JP 7134875A JP S51147159 A JPS51147159 A JP S51147159A
Authority
JP
Japan
Prior art keywords
semiconductor direct
direct oscillator
oscillator
semiconductor
simple structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7134875A
Other languages
Japanese (ja)
Inventor
Mikio Suzuki
Koji Ogiso
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7134875A priority Critical patent/JPS51147159A/en
Publication of JPS51147159A publication Critical patent/JPS51147159A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00Generation of oscillations using transit-time effects
    • H03B9/12Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H03B9/14Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
    • H03B9/141Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance and comprising a voltage sensitive element, e.g. varactor

Abstract

PURPOSE:Frequency regulation with improved linearity and simple structure achieved by removing mechanical movable element.
JP7134875A 1975-06-12 1975-06-12 Semiconductor direct oscillator Pending JPS51147159A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7134875A JPS51147159A (en) 1975-06-12 1975-06-12 Semiconductor direct oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7134875A JPS51147159A (en) 1975-06-12 1975-06-12 Semiconductor direct oscillator

Publications (1)

Publication Number Publication Date
JPS51147159A true JPS51147159A (en) 1976-12-17

Family

ID=13457890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7134875A Pending JPS51147159A (en) 1975-06-12 1975-06-12 Semiconductor direct oscillator

Country Status (1)

Country Link
JP (1) JPS51147159A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55100705A (en) * 1979-01-27 1980-07-31 Nec Corp Oscillator
JPS59111407A (en) * 1982-12-01 1984-06-27 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Tunable waveguide oscillator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55100705A (en) * 1979-01-27 1980-07-31 Nec Corp Oscillator
JPS59111407A (en) * 1982-12-01 1984-06-27 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Tunable waveguide oscillator

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