JPS51121276A - Variable capacitance element - Google Patents
Variable capacitance elementInfo
- Publication number
- JPS51121276A JPS51121276A JP4704275A JP4704275A JPS51121276A JP S51121276 A JPS51121276 A JP S51121276A JP 4704275 A JP4704275 A JP 4704275A JP 4704275 A JP4704275 A JP 4704275A JP S51121276 A JPS51121276 A JP S51121276A
- Authority
- JP
- Japan
- Prior art keywords
- variable capacitance
- capacitance element
- decreasing
- increase
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To increase the Q value in high frequency regions by decreasing the skin effect in variable capacitance elements.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4704275A JPS51121276A (en) | 1975-04-17 | 1975-04-17 | Variable capacitance element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4704275A JPS51121276A (en) | 1975-04-17 | 1975-04-17 | Variable capacitance element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51121276A true JPS51121276A (en) | 1976-10-23 |
JPS557953B2 JPS557953B2 (en) | 1980-02-29 |
Family
ID=12764099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4704275A Granted JPS51121276A (en) | 1975-04-17 | 1975-04-17 | Variable capacitance element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51121276A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07326623A (en) * | 1994-09-09 | 1995-12-12 | Res Dev Corp Of Japan | Manufacture of gaas semiconductor diode |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3579278A (en) * | 1967-10-12 | 1971-05-18 | Varian Associates | Surface barrier diode having a hypersensitive {72 {30 {0 region forming a hypersensitive voltage variable capacitor |
-
1975
- 1975-04-17 JP JP4704275A patent/JPS51121276A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3579278A (en) * | 1967-10-12 | 1971-05-18 | Varian Associates | Surface barrier diode having a hypersensitive {72 {30 {0 region forming a hypersensitive voltage variable capacitor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07326623A (en) * | 1994-09-09 | 1995-12-12 | Res Dev Corp Of Japan | Manufacture of gaas semiconductor diode |
Also Published As
Publication number | Publication date |
---|---|
JPS557953B2 (en) | 1980-02-29 |
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