JPS5383475A - Reverse conducting thyristor - Google Patents

Reverse conducting thyristor

Info

Publication number
JPS5383475A
JPS5383475A JP15995276A JP15995276A JPS5383475A JP S5383475 A JPS5383475 A JP S5383475A JP 15995276 A JP15995276 A JP 15995276A JP 15995276 A JP15995276 A JP 15995276A JP S5383475 A JPS5383475 A JP S5383475A
Authority
JP
Japan
Prior art keywords
reverse conducting
conducting thyristor
thyristor
sepped
disposing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15995276A
Other languages
Japanese (ja)
Other versions
JPS596071B2 (en
Inventor
Akira Kawakami
Tsutomu Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15995276A priority Critical patent/JPS596071B2/en
Publication of JPS5383475A publication Critical patent/JPS5383475A/en
Publication of JPS596071B2 publication Critical patent/JPS596071B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain a high dielectric strength reverse conducting thyristor having high sepped switching characteristics by disposing a thyristor part, a diode part from the outside circumference and a gate region at the center on a large diameter wafer.
JP15995276A 1976-12-28 1976-12-28 reverse conducting thyristor Expired JPS596071B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15995276A JPS596071B2 (en) 1976-12-28 1976-12-28 reverse conducting thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15995276A JPS596071B2 (en) 1976-12-28 1976-12-28 reverse conducting thyristor

Publications (2)

Publication Number Publication Date
JPS5383475A true JPS5383475A (en) 1978-07-22
JPS596071B2 JPS596071B2 (en) 1984-02-08

Family

ID=15704740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15995276A Expired JPS596071B2 (en) 1976-12-28 1976-12-28 reverse conducting thyristor

Country Status (1)

Country Link
JP (1) JPS596071B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4791470A (en) * 1984-06-12 1988-12-13 Kabushiki Kaisha Toshiba Reverse conducting gate turn-off thyristor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5446103B2 (en) * 2008-03-07 2014-03-19 サンケン電気株式会社 Bidirectional thyristor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4791470A (en) * 1984-06-12 1988-12-13 Kabushiki Kaisha Toshiba Reverse conducting gate turn-off thyristor device

Also Published As

Publication number Publication date
JPS596071B2 (en) 1984-02-08

Similar Documents

Publication Publication Date Title
JPS5224465A (en) Schottky barrier semiconductor device
JPS51142983A (en) Scr
JPS5383475A (en) Reverse conducting thyristor
JPS5353979A (en) Transistor
JPS5383472A (en) Semiconductor element
JPS51133688A (en) Sodium penitrating device
JPS52149934A (en) Cyclic code arithmetic circuit
JPS51123574A (en) Semiconductor switching device
JPS5269275A (en) Transistor
JPS5227277A (en) Darlington connction type semiconductor unit
JPS5357772A (en) Thyristor
JPS52155981A (en) Thyristor device
JPS538570A (en) Semiconductor device
JPS5233467A (en) Semiconductor switch circuit
JPS51123573A (en) Semiconductor switching device
JPS51130818A (en) Thyristor leonade device
JPS5232587A (en) Device with big current conductor
JPS5315782A (en) Semiconductor device
JPS51114081A (en) Construction of a semi-conductor device
JPS534446A (en) Waveguide type field effect transistor
JPS51140489A (en) Method of fabricating semiconductor device
JPS5368556A (en) Gate circuit for gate turn-off thyristor
JPS51139785A (en) Semiconductor device
JPS5245252A (en) Thyristor gate control circuit
JPS5383473A (en) Thyristor