JPS5383472A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS5383472A
JPS5383472A JP15945476A JP15945476A JPS5383472A JP S5383472 A JPS5383472 A JP S5383472A JP 15945476 A JP15945476 A JP 15945476A JP 15945476 A JP15945476 A JP 15945476A JP S5383472 A JPS5383472 A JP S5383472A
Authority
JP
Japan
Prior art keywords
semiconductor element
specified
setting
distance
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15945476A
Other languages
Japanese (ja)
Other versions
JPS5640988B2 (en
Inventor
Shinichi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP15945476A priority Critical patent/JPS5383472A/en
Publication of JPS5383472A publication Critical patent/JPS5383472A/en
Publication of JPS5640988B2 publication Critical patent/JPS5640988B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To obtain a required high dielectric strength characteristics by providing a protruding part from an isolating diffused layer and setting the distance from a guard ring as specified.
JP15945476A 1976-12-28 1976-12-28 Semiconductor element Granted JPS5383472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15945476A JPS5383472A (en) 1976-12-28 1976-12-28 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15945476A JPS5383472A (en) 1976-12-28 1976-12-28 Semiconductor element

Publications (2)

Publication Number Publication Date
JPS5383472A true JPS5383472A (en) 1978-07-22
JPS5640988B2 JPS5640988B2 (en) 1981-09-25

Family

ID=15694104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15945476A Granted JPS5383472A (en) 1976-12-28 1976-12-28 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS5383472A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5778171A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Thyristor
EP0332955A2 (en) * 1988-03-15 1989-09-20 Siemens Aktiengesellschaft Thyristor having a large forward and reverse blocking capability, and method of making the same
US5497026A (en) * 1991-07-02 1996-03-05 U.S. Philips Corporation Semiconductor device with improved breakdown voltage characteristics
EP1394860A3 (en) * 2002-08-28 2005-07-06 Ixys Corporation Power devices with improved breakdown voltages
US8716745B2 (en) 2005-05-12 2014-05-06 Ixys Corporation Stable diodes for low and high frequency applications

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH027833Y2 (en) * 1984-10-18 1990-02-23
JPH0457783A (en) * 1990-06-15 1992-02-25 Mitsubishi Materials Corp Storage tank

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5778171A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Thyristor
EP0332955A2 (en) * 1988-03-15 1989-09-20 Siemens Aktiengesellschaft Thyristor having a large forward and reverse blocking capability, and method of making the same
US5497026A (en) * 1991-07-02 1996-03-05 U.S. Philips Corporation Semiconductor device with improved breakdown voltage characteristics
EP1394860A3 (en) * 2002-08-28 2005-07-06 Ixys Corporation Power devices with improved breakdown voltages
US8716745B2 (en) 2005-05-12 2014-05-06 Ixys Corporation Stable diodes for low and high frequency applications

Also Published As

Publication number Publication date
JPS5640988B2 (en) 1981-09-25

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