JPS53147476A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53147476A
JPS53147476A JP6179877A JP6179877A JPS53147476A JP S53147476 A JPS53147476 A JP S53147476A JP 6179877 A JP6179877 A JP 6179877A JP 6179877 A JP6179877 A JP 6179877A JP S53147476 A JPS53147476 A JP S53147476A
Authority
JP
Japan
Prior art keywords
semiconductor device
polycrystalline
regions
semicondutor
letting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6179877A
Other languages
Japanese (ja)
Inventor
Hisakazu Mukai
Kotaro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6179877A priority Critical patent/JPS53147476A/en
Publication of JPS53147476A publication Critical patent/JPS53147476A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors

Abstract

PURPOSE:To enable elements to retain superior dielectric strength characteristics and leakage current characteristics by letting single crystal semiconductor regions connect to polycrystalline semicondutor regions through a semi-insulating polycrystalline semiconductor, by leaving the top surface.
JP6179877A 1977-05-27 1977-05-27 Semiconductor device Pending JPS53147476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6179877A JPS53147476A (en) 1977-05-27 1977-05-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6179877A JPS53147476A (en) 1977-05-27 1977-05-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS53147476A true JPS53147476A (en) 1978-12-22

Family

ID=13181473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6179877A Pending JPS53147476A (en) 1977-05-27 1977-05-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53147476A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02103950A (en) * 1988-10-13 1990-04-17 Toshiba Corp Bonded substrate for high breakdown-strength element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5297686A (en) * 1976-02-12 1977-08-16 Hitachi Ltd Dielectric insulating and isolating substrate and its production

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5297686A (en) * 1976-02-12 1977-08-16 Hitachi Ltd Dielectric insulating and isolating substrate and its production

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02103950A (en) * 1988-10-13 1990-04-17 Toshiba Corp Bonded substrate for high breakdown-strength element

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