JPS5422785A - Mis-type semiconductor memory device and its manufacture - Google Patents

Mis-type semiconductor memory device and its manufacture

Info

Publication number
JPS5422785A
JPS5422785A JP8738677A JP8738677A JPS5422785A JP S5422785 A JPS5422785 A JP S5422785A JP 8738677 A JP8738677 A JP 8738677A JP 8738677 A JP8738677 A JP 8738677A JP S5422785 A JPS5422785 A JP S5422785A
Authority
JP
Japan
Prior art keywords
mis
manufacture
memory device
type semiconductor
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8738677A
Other languages
Japanese (ja)
Inventor
Nozomi Horino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8738677A priority Critical patent/JPS5422785A/en
Publication of JPS5422785A publication Critical patent/JPS5422785A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To reduce the effective channel length and thus to reduce the occupied area by forming a uniconduction-type and high impurity density channel length limiting region within the substrate at the source and drain region forming region and then forming the source and drain regions on the forming region.
JP8738677A 1977-07-22 1977-07-22 Mis-type semiconductor memory device and its manufacture Pending JPS5422785A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8738677A JPS5422785A (en) 1977-07-22 1977-07-22 Mis-type semiconductor memory device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8738677A JPS5422785A (en) 1977-07-22 1977-07-22 Mis-type semiconductor memory device and its manufacture

Publications (1)

Publication Number Publication Date
JPS5422785A true JPS5422785A (en) 1979-02-20

Family

ID=13913444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8738677A Pending JPS5422785A (en) 1977-07-22 1977-07-22 Mis-type semiconductor memory device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5422785A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2926416A1 (en) * 1979-06-29 1981-01-22 Siemens Ag DYNAMIC SEMICONDUCTOR STORAGE CELL AND METHOD FOR THEIR PRODUCTION
DE2926417A1 (en) * 1979-06-29 1981-01-22 Siemens Ag DYNAMIC SEMICONDUCTOR STORAGE CELL AND METHOD FOR THEIR PRODUCTION
JPS5886762A (en) * 1981-11-18 1983-05-24 Nec Corp Semiconductor memory integrated circuit device
US4891747A (en) * 1984-06-25 1990-01-02 Texas Instruments Incorporated Lightly-doped drain transistor structure in contactless DRAM cell with buried source/drain

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2926416A1 (en) * 1979-06-29 1981-01-22 Siemens Ag DYNAMIC SEMICONDUCTOR STORAGE CELL AND METHOD FOR THEIR PRODUCTION
DE2926417A1 (en) * 1979-06-29 1981-01-22 Siemens Ag DYNAMIC SEMICONDUCTOR STORAGE CELL AND METHOD FOR THEIR PRODUCTION
US4613883A (en) * 1979-06-29 1986-09-23 Siemens Aktiengesellschaft Dynamic semiconductor memory cell and method for its manufacture
JPS5886762A (en) * 1981-11-18 1983-05-24 Nec Corp Semiconductor memory integrated circuit device
US4891747A (en) * 1984-06-25 1990-01-02 Texas Instruments Incorporated Lightly-doped drain transistor structure in contactless DRAM cell with buried source/drain

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