JPS5350985A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5350985A
JPS5350985A JP12595176A JP12595176A JPS5350985A JP S5350985 A JPS5350985 A JP S5350985A JP 12595176 A JP12595176 A JP 12595176A JP 12595176 A JP12595176 A JP 12595176A JP S5350985 A JPS5350985 A JP S5350985A
Authority
JP
Japan
Prior art keywords
charge accumulation
accumulation layer
memory device
semiconductor memory
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12595176A
Other languages
Japanese (ja)
Other versions
JPS5820149B2 (en
Inventor
Yoshiiku Togei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP51125951A priority Critical patent/JPS5820149B2/en
Publication of JPS5350985A publication Critical patent/JPS5350985A/en
Publication of JPS5820149B2 publication Critical patent/JPS5820149B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To reduce occupying area by providing transistor regions so as to be superposed on the charge accumulation layer on a semiconductor substrate as well as to produce shield effect and increase the charge accumulation layer by providing the drain regions of a high impurity concentration on the charge accumulation layer.
JP51125951A 1976-10-20 1976-10-20 semiconductor storage device Expired JPS5820149B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51125951A JPS5820149B2 (en) 1976-10-20 1976-10-20 semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51125951A JPS5820149B2 (en) 1976-10-20 1976-10-20 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5350985A true JPS5350985A (en) 1978-05-09
JPS5820149B2 JPS5820149B2 (en) 1983-04-21

Family

ID=14922998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51125951A Expired JPS5820149B2 (en) 1976-10-20 1976-10-20 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5820149B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5685855A (en) * 1979-12-14 1981-07-13 Fujitsu Ltd Semiconductor memory element
JPS57176757A (en) * 1981-04-22 1982-10-30 Nec Corp Semiconductor device
JPS6344755A (en) * 1987-08-10 1988-02-25 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor integrated circuit device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5685855A (en) * 1979-12-14 1981-07-13 Fujitsu Ltd Semiconductor memory element
JPS6353700B2 (en) * 1979-12-14 1988-10-25 Fujitsu Ltd
JPS57176757A (en) * 1981-04-22 1982-10-30 Nec Corp Semiconductor device
JPH0320906B2 (en) * 1981-04-22 1991-03-20 Nippon Electric Co
JPS6344755A (en) * 1987-08-10 1988-02-25 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS5820149B2 (en) 1983-04-21

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