JPS5685855A - Semiconductor memory element - Google Patents

Semiconductor memory element

Info

Publication number
JPS5685855A
JPS5685855A JP16255879A JP16255879A JPS5685855A JP S5685855 A JPS5685855 A JP S5685855A JP 16255879 A JP16255879 A JP 16255879A JP 16255879 A JP16255879 A JP 16255879A JP S5685855 A JPS5685855 A JP S5685855A
Authority
JP
Japan
Prior art keywords
region
type
film
semiconductor region
storage unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16255879A
Other languages
Japanese (ja)
Other versions
JPS6353700B2 (en
Inventor
Yoshiiku Togei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16255879A priority Critical patent/JPS5685855A/en
Publication of JPS5685855A publication Critical patent/JPS5685855A/en
Publication of JPS6353700B2 publication Critical patent/JPS6353700B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To form a dynamic RAM in a high density by burying a charge storage unit forming a semiconductor memory cell under a transistor region, thereby forming the cell in a streoscopic structure and reducing the area. CONSTITUTION:An N type first semiconductor region 4 is diffused as a charge storage unit on a P type Si substrate 2, and is surrounded by a field SiO2 film 6 to form it in a floating state. Subsequently, a P type second semiconductor region 8 is epitaxially grown in a floating state to become a channel region on the surface layer of the region 4, an N type third semiconductor region 12 transferred from polycrystalline Si or amorphous Si is formed through an interlayer isolating SiO2 insulating film 10 formed on the bottom surface adjacent thereto, and they are used as the source and drain regions of a transistor. Thereafter a thin SiO2 film 14 are covered on the regions 8 and 12, and gate electrodes 16 are mounted from the upper portion of the region 8 to the side thereof with the film 14 as a gate insulating film.
JP16255879A 1979-12-14 1979-12-14 Semiconductor memory element Granted JPS5685855A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16255879A JPS5685855A (en) 1979-12-14 1979-12-14 Semiconductor memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16255879A JPS5685855A (en) 1979-12-14 1979-12-14 Semiconductor memory element

Publications (2)

Publication Number Publication Date
JPS5685855A true JPS5685855A (en) 1981-07-13
JPS6353700B2 JPS6353700B2 (en) 1988-10-25

Family

ID=15756862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16255879A Granted JPS5685855A (en) 1979-12-14 1979-12-14 Semiconductor memory element

Country Status (1)

Country Link
JP (1) JPS5685855A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5350985A (en) * 1976-10-20 1978-05-09 Fujitsu Ltd Semiconductor memory device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5350985A (en) * 1976-10-20 1978-05-09 Fujitsu Ltd Semiconductor memory device

Also Published As

Publication number Publication date
JPS6353700B2 (en) 1988-10-25

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