JPS5541753A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS5541753A
JPS5541753A JP11527678A JP11527678A JPS5541753A JP S5541753 A JPS5541753 A JP S5541753A JP 11527678 A JP11527678 A JP 11527678A JP 11527678 A JP11527678 A JP 11527678A JP S5541753 A JPS5541753 A JP S5541753A
Authority
JP
Japan
Prior art keywords
regions
layer
polycrystal
gate
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11527678A
Other languages
Japanese (ja)
Other versions
JPS6036106B2 (en
Inventor
Junji Sakurai
Kiyoshi Miyasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP53115276A priority Critical patent/JPS6036106B2/en
Priority to DE7979301928T priority patent/DE2967388D1/en
Priority to EP79301928A priority patent/EP0009910B1/en
Priority to CA000335866A priority patent/CA1144646A/en
Priority to US06/076,993 priority patent/US4329704A/en
Publication of JPS5541753A publication Critical patent/JPS5541753A/en
Publication of JPS6036106B2 publication Critical patent/JPS6036106B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the density of memory-cell integration by providing embeded regions in a memory device and using them as juntion capacitances. CONSTITUTION:A plurality of N<+> embeded regions 2 are diffused in a P<+> Si substrate 1, the regions 2 are surrounded by an SiO2 film 3, and P-type layer is epitaxially grown all over the surface. Then, P<+> monocrystal layer 4s is formed on the regions 2 to prevent the rising of the regions 2, and a P<+> polycrystal layer 4p is formed on the film 3. Thereafter, P<-> monocrystal layer 5s and P<-> polycrystal layer 5p are stacked and epitaxially grown on the layer 4s and 4p, respectively, and oxidized films 6 are formed in the polycrystal layers 5p and 4p, thereby memory-cell portion is separated. Two gate-oxidized films 7 and Si-gate electrodes 8 are vertically provided on the monocrystal layer 5s, which is centrally located, at the positions opposing the regions 2. An N<+> source region 10 and drain regions 11 are diffused on both sides of the gate-oxidized films 7 and in the regions 2. Then, a PSG film 9 is provided all over the surface, an opening is provided, and an Al- electrode wire 12 which is connected to the region 10 is deposited.
JP53115276A 1978-09-20 1978-09-20 semiconductor storage device Expired JPS6036106B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP53115276A JPS6036106B2 (en) 1978-09-20 1978-09-20 semiconductor storage device
DE7979301928T DE2967388D1 (en) 1978-09-20 1979-09-18 Semiconductor memory device and process for fabricating the device
EP79301928A EP0009910B1 (en) 1978-09-20 1979-09-18 Semiconductor memory device and process for fabricating the device
CA000335866A CA1144646A (en) 1978-09-20 1979-09-18 Dynamic ram having buried capacitor and planar gate
US06/076,993 US4329704A (en) 1978-09-20 1979-09-19 MOS Random access memory with buried storage capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53115276A JPS6036106B2 (en) 1978-09-20 1978-09-20 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5541753A true JPS5541753A (en) 1980-03-24
JPS6036106B2 JPS6036106B2 (en) 1985-08-19

Family

ID=14658644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53115276A Expired JPS6036106B2 (en) 1978-09-20 1978-09-20 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS6036106B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5843779A (en) * 1981-09-08 1983-03-14 Ookura Syuzo Kk Brewing method of japanese sake
JPS58204568A (en) * 1982-05-24 1983-11-29 Hitachi Ltd Semiconductor device
JPS5998678A (en) * 1982-11-30 1984-06-07 Masaharu Uematsu Dried alpha-type white bran and its preparation
JPS5998679A (en) * 1982-11-30 1984-06-07 Masaharu Uematsu Dried alpha-type white bran for preparation of japanese sake, and its preparation
JPS62107766A (en) * 1985-11-07 1987-05-19 Nisshin Flour Milling Co Ltd Production of processed raw material for brewing
JPS62171666A (en) * 1986-01-22 1987-07-28 Tech Res Assoc Extru Cook Food Ind Production of secondary raw material for 'shochu'

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5843779A (en) * 1981-09-08 1983-03-14 Ookura Syuzo Kk Brewing method of japanese sake
JPH0240313B2 (en) * 1981-09-08 1990-09-11 Gekkeikan Kk
JPS58204568A (en) * 1982-05-24 1983-11-29 Hitachi Ltd Semiconductor device
JPH046106B2 (en) * 1982-05-24 1992-02-04 Hitachi Ltd
JPS5998678A (en) * 1982-11-30 1984-06-07 Masaharu Uematsu Dried alpha-type white bran and its preparation
JPS5998679A (en) * 1982-11-30 1984-06-07 Masaharu Uematsu Dried alpha-type white bran for preparation of japanese sake, and its preparation
JPS62107766A (en) * 1985-11-07 1987-05-19 Nisshin Flour Milling Co Ltd Production of processed raw material for brewing
JPH0517826B2 (en) * 1985-11-07 1993-03-10 Nisshin Flour Milling Co
JPS62171666A (en) * 1986-01-22 1987-07-28 Tech Res Assoc Extru Cook Food Ind Production of secondary raw material for 'shochu'
JPH0113836B2 (en) * 1986-01-22 1989-03-08 Suehiro Tetsukosho Kk

Also Published As

Publication number Publication date
JPS6036106B2 (en) 1985-08-19

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