JPS5658254A - Manufacture of mos type semiconductor memory device - Google Patents

Manufacture of mos type semiconductor memory device

Info

Publication number
JPS5658254A
JPS5658254A JP13280779A JP13280779A JPS5658254A JP S5658254 A JPS5658254 A JP S5658254A JP 13280779 A JP13280779 A JP 13280779A JP 13280779 A JP13280779 A JP 13280779A JP S5658254 A JPS5658254 A JP S5658254A
Authority
JP
Japan
Prior art keywords
film
region
memory capacity
active region
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13280779A
Other languages
Japanese (ja)
Other versions
JPS5824022B2 (en
Inventor
Masayoshi Ino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP54132807A priority Critical patent/JPS5824022B2/en
Publication of JPS5658254A publication Critical patent/JPS5658254A/en
Publication of JPS5824022B2 publication Critical patent/JPS5824022B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Abstract

PURPOSE:To obtain a large memory capacity with a limited area of the device by shaping the memory capacity section composing a MOS semiconductor memory device three-dimensionally. CONSTITUTION:A thick SiO2 film 2 is provided in a nonactive region about a semiconductor substrate and after a thin SiO2 film 9 is applied on an active region surrounded thereby, a PSG or an Si3N4 film 10 is entirely formed thereover. Then, an opening is etched through a part of the active region to expose the substrate 1 in the region 11, where the first polycrystaline Si body 12 containing impurities having a pillar like undersurface and the surface parallel to the substrate 1 is exposed onto the end of a laminated film in the region 11. Once the films 10 and 9 are removed, a gate SiO2 film 31 is applied entirely covering the active region and the surface of the Si body 12. Subsequently, the second polycrystal line Si body 131 containing impurities is provided wrapping the first Si body 12 to form an electrode of a polycrystal line Si on the film 31 exposed thereby increasing the surface area of the memory capacity section.
JP54132807A 1979-10-17 1979-10-17 Manufacturing method of MOS type semiconductor memory device Expired JPS5824022B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54132807A JPS5824022B2 (en) 1979-10-17 1979-10-17 Manufacturing method of MOS type semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54132807A JPS5824022B2 (en) 1979-10-17 1979-10-17 Manufacturing method of MOS type semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5658254A true JPS5658254A (en) 1981-05-21
JPS5824022B2 JPS5824022B2 (en) 1983-05-18

Family

ID=15090031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54132807A Expired JPS5824022B2 (en) 1979-10-17 1979-10-17 Manufacturing method of MOS type semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5824022B2 (en)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213461A (en) * 1982-06-07 1983-12-12 Nec Corp Semiconductor device
JPS58215067A (en) * 1982-06-08 1983-12-14 Nec Corp Semiconductor integrated circuit device
JPS58225662A (en) * 1982-06-24 1983-12-27 Nec Corp Semiconductor device
JPS5989450A (en) * 1982-11-15 1984-05-23 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS59104156A (en) * 1982-12-07 1984-06-15 Toshiba Corp Multilayer capacitor
JPS59222959A (en) * 1983-06-01 1984-12-14 Hitachi Ltd Semiconductor memory
JPS62128168A (en) * 1985-11-29 1987-06-10 Hitachi Ltd Manufacture of charge accumulating capacitor
JPS63208263A (en) * 1987-02-25 1988-08-29 Toshiba Corp Semiconductor device
EP0295709A2 (en) * 1987-06-17 1988-12-21 Fujitsu Limited Dynamic random access memory device and method of producing the same
JPH01117354A (en) * 1987-06-24 1989-05-10 Fujitsu Ltd Semiconductor device and manufacture thereof
JPH01147857A (en) * 1987-12-03 1989-06-09 Fujitsu Ltd Semiconductor memory and manufacture thereof
FR2632453A1 (en) * 1988-06-07 1989-12-08 Samsung Electronics Co Ltd Dram memory cell with stacked capacitor and method of manufacturing such a cell
JPH02135775A (en) * 1988-11-16 1990-05-24 Mitsubishi Electric Corp Semiconductor storage device and manufacture thereof
EP0386947A2 (en) * 1989-03-06 1990-09-12 STMicroelectronics, Inc. Dynamic random access memory cell
US5049517A (en) * 1990-11-07 1991-09-17 Micron Technology, Inc. Method for formation of a stacked capacitor
US5053351A (en) * 1991-03-19 1991-10-01 Micron Technology, Inc. Method of making stacked E-cell capacitor DRAM cell
US5128273A (en) * 1987-11-25 1992-07-07 Fujitsu Limited Method of making a dynamic random access memory cell with stacked capacitor
US5162250A (en) * 1989-06-30 1992-11-10 Texas Instruments, Incorporated Method for interconnecting a filament channel transistor with a wordline conductor
US5650647A (en) * 1987-06-17 1997-07-22 Fujitsu Limited Dynamic random access memory device and method of producing same
US5939746A (en) * 1995-12-14 1999-08-17 Nec Corporation Semiconductor memory device and manufacturing method of the same
US6617205B1 (en) 1995-11-20 2003-09-09 Hitachi, Ltd. Semiconductor storage device and process for manufacturing the same

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0138375B2 (en) * 1982-06-07 1989-08-14 Nippon Electric Co
JPS58213461A (en) * 1982-06-07 1983-12-12 Nec Corp Semiconductor device
JPS58215067A (en) * 1982-06-08 1983-12-14 Nec Corp Semiconductor integrated circuit device
JPH0328828B2 (en) * 1982-06-08 1991-04-22 Nippon Electric Co
JPS58225662A (en) * 1982-06-24 1983-12-27 Nec Corp Semiconductor device
JPS5989450A (en) * 1982-11-15 1984-05-23 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS59104156A (en) * 1982-12-07 1984-06-15 Toshiba Corp Multilayer capacitor
JPS59222959A (en) * 1983-06-01 1984-12-14 Hitachi Ltd Semiconductor memory
JPS62128168A (en) * 1985-11-29 1987-06-10 Hitachi Ltd Manufacture of charge accumulating capacitor
JPS63208263A (en) * 1987-02-25 1988-08-29 Toshiba Corp Semiconductor device
EP0295709A2 (en) * 1987-06-17 1988-12-21 Fujitsu Limited Dynamic random access memory device and method of producing the same
US5021357A (en) * 1987-06-17 1991-06-04 Fujitsu Limited Method of making a dram cell with stacked capacitor
US5650647A (en) * 1987-06-17 1997-07-22 Fujitsu Limited Dynamic random access memory device and method of producing same
JPH01117354A (en) * 1987-06-24 1989-05-10 Fujitsu Ltd Semiconductor device and manufacture thereof
US5572053A (en) * 1987-11-25 1996-11-05 Fujitsu Limited Dynamic random access memory cell having a stacked capacitor
US6114721A (en) * 1987-11-25 2000-09-05 Fujitsu Limited Dynamic random access memory device and method for producing the same
US6046468A (en) * 1987-11-25 2000-04-04 Fujitsu Limited Dynamic random access memory device and method for producing the same
US5128273A (en) * 1987-11-25 1992-07-07 Fujitsu Limited Method of making a dynamic random access memory cell with stacked capacitor
JPH01147857A (en) * 1987-12-03 1989-06-09 Fujitsu Ltd Semiconductor memory and manufacture thereof
FR2632453A1 (en) * 1988-06-07 1989-12-08 Samsung Electronics Co Ltd Dram memory cell with stacked capacitor and method of manufacturing such a cell
NL8803117A (en) * 1988-06-07 1990-01-02 Samsung Electronics Co Ltd STACKED CAPACITOR-DRAM-CELL.
JPH02135775A (en) * 1988-11-16 1990-05-24 Mitsubishi Electric Corp Semiconductor storage device and manufacture thereof
US5143861A (en) * 1989-03-06 1992-09-01 Sgs-Thomson Microelectronics, Inc. Method making a dynamic random access memory cell with a tungsten plug
EP0386947A2 (en) * 1989-03-06 1990-09-12 STMicroelectronics, Inc. Dynamic random access memory cell
US5162250A (en) * 1989-06-30 1992-11-10 Texas Instruments, Incorporated Method for interconnecting a filament channel transistor with a wordline conductor
US5049517A (en) * 1990-11-07 1991-09-17 Micron Technology, Inc. Method for formation of a stacked capacitor
US5053351A (en) * 1991-03-19 1991-10-01 Micron Technology, Inc. Method of making stacked E-cell capacitor DRAM cell
US6617205B1 (en) 1995-11-20 2003-09-09 Hitachi, Ltd. Semiconductor storage device and process for manufacturing the same
US6791134B2 (en) 1995-11-20 2004-09-14 Hitachi, Ltd. Semiconductor memory device and manufacturing method thereof
US6798005B2 (en) 1995-11-20 2004-09-28 Hitachi, Ltd. Semiconductor memory device having large storage capacity and minimal step height between memory cell and peripheral circuits
US7196368B2 (en) 1995-11-20 2007-03-27 Renesas Technology Corp. Semiconductor memory arrangements with crown shaped capacitor arrangements trenched in interlayer dielectric film
US5939746A (en) * 1995-12-14 1999-08-17 Nec Corporation Semiconductor memory device and manufacturing method of the same
US5953609A (en) * 1995-12-14 1999-09-14 Nec Corporation Method of manufacturing a semiconductor memory device

Also Published As

Publication number Publication date
JPS5824022B2 (en) 1983-05-18

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