JPS5656679A - Semiconductor memory element - Google Patents
Semiconductor memory elementInfo
- Publication number
- JPS5656679A JPS5656679A JP13261279A JP13261279A JPS5656679A JP S5656679 A JPS5656679 A JP S5656679A JP 13261279 A JP13261279 A JP 13261279A JP 13261279 A JP13261279 A JP 13261279A JP S5656679 A JPS5656679 A JP S5656679A
- Authority
- JP
- Japan
- Prior art keywords
- memory part
- memory
- layer
- sio2
- thinned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Abstract
PURPOSE:To raise the performance of the memory element by composing a memory part of the layers of SiO2, Si3N4, multicrystal Si and SiO2 and a gate electrode provided on an Si substrate in the memory element having a memory part and an auxiliary memory part in respect to the memory of SNOS and MNOS types. CONSTITUTION:On the surface region of the Si sibstrate 11, a source region 12 and a drain region 12' are formed diffusively and on the whole surface inclusive of these regions are laminated fitly the SiO2 layer 13 and the Si3N4 layer 14. On the occasion, the thickness of the layers 13 and 14 is thinned at the central part TR5 between the regions 12 and 12' and the part is employed as the memory part, while the parts TR4 and TR6 of the layers 13 and 14 surrounding the thinned part are thickened so as to be employed as the auxiliary memory part. Next, in the central concavity of the memory part, the multicrystal Si layer 17 is provided, the surface of the memory part and the auxiliary memory part is covered with the thick SiO2 layer 18, while the central region thereof alone is thinned and there the Al gate electrode 15 is attached. After that, an opening is made in the layer 13 and a source electrode 16 and a drain electrode 16' contacting respectively with the regions 12 and 12' are formed therein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13261279A JPS5656679A (en) | 1979-10-15 | 1979-10-15 | Semiconductor memory element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13261279A JPS5656679A (en) | 1979-10-15 | 1979-10-15 | Semiconductor memory element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5656679A true JPS5656679A (en) | 1981-05-18 |
Family
ID=15085391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13261279A Pending JPS5656679A (en) | 1979-10-15 | 1979-10-15 | Semiconductor memory element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5656679A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0081951A2 (en) * | 1981-12-16 | 1983-06-22 | Inmos Corporation | A semiconductor memory cell |
| JP2008072009A (en) * | 2006-09-15 | 2008-03-27 | Ricoh Co Ltd | Electrical board, and image forming device |
-
1979
- 1979-10-15 JP JP13261279A patent/JPS5656679A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0081951A2 (en) * | 1981-12-16 | 1983-06-22 | Inmos Corporation | A semiconductor memory cell |
| JP2008072009A (en) * | 2006-09-15 | 2008-03-27 | Ricoh Co Ltd | Electrical board, and image forming device |
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