JPS5658255A - Mos type semiconductor memory device - Google Patents

Mos type semiconductor memory device

Info

Publication number
JPS5658255A
JPS5658255A JP13280979A JP13280979A JPS5658255A JP S5658255 A JPS5658255 A JP S5658255A JP 13280979 A JP13280979 A JP 13280979A JP 13280979 A JP13280979 A JP 13280979A JP S5658255 A JPS5658255 A JP S5658255A
Authority
JP
Japan
Prior art keywords
film
memory capacity
substrate
impurities
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13280979A
Other languages
Japanese (ja)
Other versions
JPS6410948B2 (en
Inventor
Masayoshi Ino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP13280979A priority Critical patent/JPS5658255A/en
Publication of JPS5658255A publication Critical patent/JPS5658255A/en
Publication of JPS6410948B2 publication Critical patent/JPS6410948B2/ja
Granted legal-status Critical Current

Links

Classifications

    • A—HUMAN NECESSITIES
    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
    • A47C—CHAIRS; SOFAS; BEDS
    • A47C7/00—Parts, details, or accessories of chairs or stools
    • A47C7/62—Accessories for chairs
    • A47C7/68—Arm-rest tables ; or back-rest tables
    • A47C7/70—Arm-rest tables ; or back-rest tables of foldable type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a larger memory capacity along with smaller dimensions as a whole by shaping the memory capacity section formed on a semiconductor substrate three dimensional in the construction. CONSTITUTION:A thin dielectric insulator film 3 is applied on an active layer of the semiconductor substrate 1 and an opening is etched in the center thereof to form an impurities diffused region 8 within the substrate 1 exposed. An opening is provided through a dielectric insulator film 3' extended into one of the film 3 to form impurities diffused regions 5 and 5' and both regions are entirely wrapped with a thick oxide film 2. The first impurities containing polycrystal line Si body 6 composing a memory capacity section is so constructed to have a pillarlike part on the undersurface thereof and is fixed with the bottom of the pillarlike body bearing on the region 8 while the outside thereof is wrapped with the film 3. In this manner, the polycrystal Si body is integrated with the film 3 on the substrate 1. Subsequently, the Si body 6 is surrounded by a memory capacity section comprising the second polycrystal line Si 7 containing impurities similarly and a polycrystal line Si gate electrode 7' is applied on the substrate 1 between the regions 5 and 5' through a transmission gate insulator film 3' comprising the film 3' previously provided.
JP13280979A 1979-10-17 1979-10-17 Mos type semiconductor memory device Granted JPS5658255A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13280979A JPS5658255A (en) 1979-10-17 1979-10-17 Mos type semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13280979A JPS5658255A (en) 1979-10-17 1979-10-17 Mos type semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5658255A true JPS5658255A (en) 1981-05-21
JPS6410948B2 JPS6410948B2 (en) 1989-02-22

Family

ID=15090079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13280979A Granted JPS5658255A (en) 1979-10-17 1979-10-17 Mos type semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5658255A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61208255A (en) * 1985-03-13 1986-09-16 Toshiba Corp Semiconductor memory device
EP0194682A2 (en) * 1985-03-13 1986-09-17 Kabushiki Kaisha Toshiba Semiconductor memory device
JPS63208263A (en) * 1987-02-25 1988-08-29 Toshiba Corp Semiconductor device
US4974040A (en) * 1987-06-17 1990-11-27 Fujitsu Limited Dynamic random access memory device and method of producing same
JPH03270162A (en) * 1990-03-20 1991-12-02 Toshiba Corp Semiconductor device and its manufacture
US5071783A (en) * 1987-06-17 1991-12-10 Fujitsu Limited Method of producing a dynamic random access memory device
US5650647A (en) * 1987-06-17 1997-07-22 Fujitsu Limited Dynamic random access memory device and method of producing same
US5939746A (en) * 1995-12-14 1999-08-17 Nec Corporation Semiconductor memory device and manufacturing method of the same
US6046468A (en) * 1987-11-25 2000-04-04 Fujitsu Limited Dynamic random access memory device and method for producing the same
US6617205B1 (en) 1995-11-20 2003-09-09 Hitachi, Ltd. Semiconductor storage device and process for manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52104088A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Mis capacitor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52104088A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Mis capacitor

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0194682A2 (en) * 1985-03-13 1986-09-17 Kabushiki Kaisha Toshiba Semiconductor memory device
JPS61208255A (en) * 1985-03-13 1986-09-16 Toshiba Corp Semiconductor memory device
JPS63208263A (en) * 1987-02-25 1988-08-29 Toshiba Corp Semiconductor device
US4974040A (en) * 1987-06-17 1990-11-27 Fujitsu Limited Dynamic random access memory device and method of producing same
US5021357A (en) * 1987-06-17 1991-06-04 Fujitsu Limited Method of making a dram cell with stacked capacitor
US5071783A (en) * 1987-06-17 1991-12-10 Fujitsu Limited Method of producing a dynamic random access memory device
US5650647A (en) * 1987-06-17 1997-07-22 Fujitsu Limited Dynamic random access memory device and method of producing same
US6046468A (en) * 1987-11-25 2000-04-04 Fujitsu Limited Dynamic random access memory device and method for producing the same
US6114721A (en) * 1987-11-25 2000-09-05 Fujitsu Limited Dynamic random access memory device and method for producing the same
JPH03270162A (en) * 1990-03-20 1991-12-02 Toshiba Corp Semiconductor device and its manufacture
US6617205B1 (en) 1995-11-20 2003-09-09 Hitachi, Ltd. Semiconductor storage device and process for manufacturing the same
US6791134B2 (en) 1995-11-20 2004-09-14 Hitachi, Ltd. Semiconductor memory device and manufacturing method thereof
US6798005B2 (en) 1995-11-20 2004-09-28 Hitachi, Ltd. Semiconductor memory device having large storage capacity and minimal step height between memory cell and peripheral circuits
US7196368B2 (en) 1995-11-20 2007-03-27 Renesas Technology Corp. Semiconductor memory arrangements with crown shaped capacitor arrangements trenched in interlayer dielectric film
US5953609A (en) * 1995-12-14 1999-09-14 Nec Corporation Method of manufacturing a semiconductor memory device
US5939746A (en) * 1995-12-14 1999-08-17 Nec Corporation Semiconductor memory device and manufacturing method of the same

Also Published As

Publication number Publication date
JPS6410948B2 (en) 1989-02-22

Similar Documents

Publication Publication Date Title
JPS6421967A (en) Semiconductor device and manufacture thereof
JPS5658254A (en) Manufacture of mos type semiconductor memory device
JPS5658255A (en) Mos type semiconductor memory device
JPS57133668A (en) Semiconductor memory storage
JPS5519820A (en) Semiconductor device
JPS5521102A (en) Semiconductor memory cell
JPS5658253A (en) Capacitor for integrated circuit
JPS5632757A (en) Insulated gate type transistor and integrated circuit
JPS5627942A (en) Semiconductor device and its manufacturing method
JPS5522885A (en) Insulation gate type field effect semiconductor device
JPS561558A (en) Dynamic memory cell
JPS57100760A (en) Manufacture of semiconductor device
JPS55154759A (en) Manufacture of semiconductor memory device
JPS6435958A (en) Thin film transistor
JPS5376771A (en) Insulated gate type field effect transistor
JPS55160455A (en) Manufacture of insulated gate type field effect semiconductor device
JPS5591166A (en) Semiconductor memory
JPS57128957A (en) Semiconductor integrated circuit device and manufacture thereof
JPS6436062A (en) Large scale integratable memory cell
JPS6425465A (en) Semiconductor storage device
JPS564279A (en) Insulated gate type field effect transistor
JPS55160456A (en) Semiconductor device
JPS57103349A (en) Semiconductor memory device
JPS5642372A (en) Manufacture of semiconductor device
JPS566464A (en) Semiconductor device and manufacture thereof