JPS5658253A - Capacitor for integrated circuit - Google Patents

Capacitor for integrated circuit

Info

Publication number
JPS5658253A
JPS5658253A JP13280479A JP13280479A JPS5658253A JP S5658253 A JPS5658253 A JP S5658253A JP 13280479 A JP13280479 A JP 13280479A JP 13280479 A JP13280479 A JP 13280479A JP S5658253 A JPS5658253 A JP S5658253A
Authority
JP
Japan
Prior art keywords
electrostatic capacity
area
substrate
insulator film
undersurface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13280479A
Other languages
Japanese (ja)
Inventor
Masayoshi Ino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP13280479A priority Critical patent/JPS5658253A/en
Publication of JPS5658253A publication Critical patent/JPS5658253A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain the capacitor large in an electrostatic capacity with a smaller area by expanding the area of opposed electrodes with a three-dimensional construction of the electrostatic capacity section formed on a semiconductor substrate. CONSTITUTION:When the first polycrystalline Si body 4' composing one of electrostatic capacity sections is formed on the semiconductor substrate 1, a dielectric insulator film 3 is applied over the entire substrate 1 and a contact region R of a small area is opened in the center thereof to have the Si body 4' contacting the substrate 1. Then, an Si body 4' having a pillar-shaped part in the center of the undersurface thereof while a top of a large area parallel to the substrate 1 is formed with the undersurface of the pillar-shaped part contacting the region R and the surface of the Si body 4' is covered with a dielectric insulator film 3' being integrated with the film 3. Thereafter, the circumference of the Si body 4' is entirely wrapped with the second Si body 5 serving as an electrostatic capacity section by way of the films 3 and 3' and the assembly is enclosed by a thick insulator film 3. This allows the Si body 4' to serve as an electrostatic capacity section both in the surface and back thereof, thereby enhancing the capacity in proportion to increment in the area.
JP13280479A 1979-10-17 1979-10-17 Capacitor for integrated circuit Pending JPS5658253A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13280479A JPS5658253A (en) 1979-10-17 1979-10-17 Capacitor for integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13280479A JPS5658253A (en) 1979-10-17 1979-10-17 Capacitor for integrated circuit

Publications (1)

Publication Number Publication Date
JPS5658253A true JPS5658253A (en) 1981-05-21

Family

ID=15089956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13280479A Pending JPS5658253A (en) 1979-10-17 1979-10-17 Capacitor for integrated circuit

Country Status (1)

Country Link
JP (1) JPS5658253A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60211866A (en) * 1984-04-05 1985-10-24 Mitsubishi Electric Corp Semiconductor integrated circuit
US5530274A (en) * 1994-03-25 1996-06-25 Mitsubishi Denki Kabushiki Kaisha Mos capacitor, Vpp switch circuit, charge pump circuit, eeprom, microcomputer, and IC card
US5629228A (en) * 1992-07-23 1997-05-13 Texas Instruments Incorporated Method of making stacked DRAM capacitor structure by using a conformal conductor
US6046468A (en) * 1987-11-25 2000-04-04 Fujitsu Limited Dynamic random access memory device and method for producing the same
US6617205B1 (en) 1995-11-20 2003-09-09 Hitachi, Ltd. Semiconductor storage device and process for manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52104088A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Mis capacitor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52104088A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Mis capacitor

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60211866A (en) * 1984-04-05 1985-10-24 Mitsubishi Electric Corp Semiconductor integrated circuit
US6046468A (en) * 1987-11-25 2000-04-04 Fujitsu Limited Dynamic random access memory device and method for producing the same
US6114721A (en) * 1987-11-25 2000-09-05 Fujitsu Limited Dynamic random access memory device and method for producing the same
US5629228A (en) * 1992-07-23 1997-05-13 Texas Instruments Incorporated Method of making stacked DRAM capacitor structure by using a conformal conductor
US5952688A (en) * 1992-07-23 1999-09-14 Texas Instruments Incorporated Stacked DRAM structure
US5530274A (en) * 1994-03-25 1996-06-25 Mitsubishi Denki Kabushiki Kaisha Mos capacitor, Vpp switch circuit, charge pump circuit, eeprom, microcomputer, and IC card
US6617205B1 (en) 1995-11-20 2003-09-09 Hitachi, Ltd. Semiconductor storage device and process for manufacturing the same
US6791134B2 (en) 1995-11-20 2004-09-14 Hitachi, Ltd. Semiconductor memory device and manufacturing method thereof
US6798005B2 (en) 1995-11-20 2004-09-28 Hitachi, Ltd. Semiconductor memory device having large storage capacity and minimal step height between memory cell and peripheral circuits
US7196368B2 (en) 1995-11-20 2007-03-27 Renesas Technology Corp. Semiconductor memory arrangements with crown shaped capacitor arrangements trenched in interlayer dielectric film

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