JPS551176A - Semiconductor strain convertor - Google Patents

Semiconductor strain convertor

Info

Publication number
JPS551176A
JPS551176A JP3562679A JP3562679A JPS551176A JP S551176 A JPS551176 A JP S551176A JP 3562679 A JP3562679 A JP 3562679A JP 3562679 A JP3562679 A JP 3562679A JP S551176 A JPS551176 A JP S551176A
Authority
JP
Japan
Prior art keywords
strain
main surface
semiconductor
metal
gauge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3562679A
Other languages
Japanese (ja)
Other versions
JPS5810868B2 (en
Inventor
Michitaka Shimazoe
Tetsuo Kosugi
Yasuo Matsushita
Yasutoshi Kurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP54035626A priority Critical patent/JPS5810868B2/en
Publication of JPS551176A publication Critical patent/JPS551176A/en
Publication of JPS5810868B2 publication Critical patent/JPS5810868B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE: To better the electric insulation characteristics berween the semiconductor member and the metal strain causing body by means of an insulating thin film formed on the side of a semiconductor strain gauge with a strain measuring means composed of the gauge and the metal material glued only on the area excluding the proximity around the second main surface.
CONSTITUTION: A semiconductor strain gauge 1 having a strain sensitive region on the first main surface of a single crystal conductor is integrated with a strain measuring means 17 made of metal material through an alloy material 18. In this arrangement, an insulating substance 15 is entrely applied on the second main surface 14 of the conductor facing the first main surface of thereof. The second main surface 14 is glues only on the central portion of the crystal through the alloy material avoiding at least the surrounding area of thereof. An insulating thin film is formed on the side of the semiconductor strain gauge as a two-layer film made by a vapor phase reaction method or a sputtering method so as to improve the insulation characteristics between the semiconductor means and the metal strain causing body.
COPYRIGHT: (C)1980,JPO&Japio
JP54035626A 1979-03-28 1979-03-28 semiconductor strain transducer Expired JPS5810868B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54035626A JPS5810868B2 (en) 1979-03-28 1979-03-28 semiconductor strain transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54035626A JPS5810868B2 (en) 1979-03-28 1979-03-28 semiconductor strain transducer

Publications (2)

Publication Number Publication Date
JPS551176A true JPS551176A (en) 1980-01-07
JPS5810868B2 JPS5810868B2 (en) 1983-02-28

Family

ID=12447065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54035626A Expired JPS5810868B2 (en) 1979-03-28 1979-03-28 semiconductor strain transducer

Country Status (1)

Country Link
JP (1) JPS5810868B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62257807A (en) * 1986-05-06 1987-11-10 トヨタ自動車株式会社 Injection molding method of ceramics
US4769204A (en) * 1985-12-03 1988-09-06 Shin-Etsu Chemical Co., Ltd. Method of reactive injection molding of a urethane-based resin composition with good mold releasability and a polyol therefor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0543889Y2 (en) * 1985-02-18 1993-11-05

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5093785A (en) * 1973-12-21 1975-07-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5093785A (en) * 1973-12-21 1975-07-26

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4769204A (en) * 1985-12-03 1988-09-06 Shin-Etsu Chemical Co., Ltd. Method of reactive injection molding of a urethane-based resin composition with good mold releasability and a polyol therefor
JPS62257807A (en) * 1986-05-06 1987-11-10 トヨタ自動車株式会社 Injection molding method of ceramics
JPH0568322B2 (en) * 1986-05-06 1993-09-28 Toyota Motor Co Ltd

Also Published As

Publication number Publication date
JPS5810868B2 (en) 1983-02-28

Similar Documents

Publication Publication Date Title
JPS5425178A (en) Manufacture for semiconductor device
JPS52127257A (en) Displacement converter
JPS551176A (en) Semiconductor strain convertor
JPS5658253A (en) Capacitor for integrated circuit
JPS568863A (en) Substrate for semiconductor device
JPS5316589A (en) Semiconductor pressure transducer
JPS5441673A (en) Semiconductor device and its manufacture
JPS523383A (en) Manufacturing method of semiconductor device electrode
JPS5662382A (en) Hall element
JPS5359880A (en) Connector applied for aluminum conductor
JPS558005A (en) Bonding pad substructure
JPS52117063A (en) Preparation of ohmic ontact layer in semiconductor device
JPS5267963A (en) Manufacture of semiconductor unit
JPS5539043A (en) Strain gauge and its adhesion
JPS5626234A (en) Semiconductor pressure converter
JPS5348671A (en) Electrode structure of semiconductor element
JPS5356969A (en) Production of tape for tape carrier
JPS5364467A (en) Electrode
JPS5368970A (en) Solder electrode structure
JPS5612525A (en) Load converter
JPS55113380A (en) Semiconductor displacement transducer
JPS5626446A (en) Semiconductor device
JPS5358249A (en) Thermal head and its manufacture
JPS53107288A (en) Semiconductor strain transducer
JPS56118375A (en) Semiconductor displacement convertor