JPS55113380A - Semiconductor displacement transducer - Google Patents
Semiconductor displacement transducerInfo
- Publication number
- JPS55113380A JPS55113380A JP1966179A JP1966179A JPS55113380A JP S55113380 A JPS55113380 A JP S55113380A JP 1966179 A JP1966179 A JP 1966179A JP 1966179 A JP1966179 A JP 1966179A JP S55113380 A JPS55113380 A JP S55113380A
- Authority
- JP
- Japan
- Prior art keywords
- strain
- thickness
- oxide film
- region
- senser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Pressure Sensors (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
PURPOSE: To allow a semiconductor displacement transducer to accurately transmit a strain occurred between a strain senser and a strain transfer member by specifying the thickness of an oxide film formed on the strain transfer member of a semiconductor substrate in the transducer and thus improving the yield of an electric insulation between the senser and the member of the transducer.
CONSTITUTION: A strain-sensitive region 13 is formed on one main surface 12 side of a semiconductor monocrystal 11, and a semiconductor strain detector 16 having an insulated oxide film 15 and a strain transfer member 17 made of elastic metallic material are integrated through a solder layer of alloy material on the other main surface 14 of the monocrystal 11. In this configuration the oxide film 15 is formed at higher than 2μm thick, preferably 2∼7μm. The insulating yield between the senser 13 and the member 17 strongly depends upon the thickness in the region that the oxide film 15 is thin, becomes high in the region that the thickness is higher than 2μm and does not have high dependence on the thickness in that region. On the other hand, the strain transfer from the member to the senser tends to be reduced as the oxide film becomes thicker. However, the strain transfer becomes accurate in the region up to a thickness of 7μm.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1966179A JPS55113380A (en) | 1979-02-23 | 1979-02-23 | Semiconductor displacement transducer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1966179A JPS55113380A (en) | 1979-02-23 | 1979-02-23 | Semiconductor displacement transducer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55113380A true JPS55113380A (en) | 1980-09-01 |
Family
ID=12005421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1966179A Pending JPS55113380A (en) | 1979-02-23 | 1979-02-23 | Semiconductor displacement transducer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55113380A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5345878B2 (en) * | 1973-04-24 | 1978-12-09 |
-
1979
- 1979-02-23 JP JP1966179A patent/JPS55113380A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5345878B2 (en) * | 1973-04-24 | 1978-12-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55113380A (en) | Semiconductor displacement transducer | |
JPS57197860A (en) | Semiconductor device | |
JPS551176A (en) | Semiconductor strain convertor | |
JPS5513904A (en) | Semiconductor device and its manufacturing method | |
JPS55113381A (en) | Semiconductor displacement transducer | |
JPS5267963A (en) | Manufacture of semiconductor unit | |
JPS5477082A (en) | Semiconductor displacement transducer | |
JPS57115554A (en) | Photoconductive material | |
JPS55117934A (en) | Thermosensitive element | |
JPS5441673A (en) | Semiconductor device and its manufacture | |
JPS6415686A (en) | Radiation detecting element | |
JPS56124253A (en) | Compound terminal for integrated circuit | |
JPS54593A (en) | Semiconductor displacement transducer | |
JPS5662373A (en) | Semiconductor directional pressure transformer | |
JPS5356969A (en) | Production of tape for tape carrier | |
JPS54111796A (en) | Semiconductor element and its manufacture | |
JPS56138946A (en) | Semiconductor device | |
JPS57114242A (en) | Semiconductor device | |
JPS5626234A (en) | Semiconductor pressure converter | |
JPS558005A (en) | Bonding pad substructure | |
JPS54144891A (en) | Displacement converter of semiconductor | |
JPS5796573A (en) | Semiconductor strain transducer | |
JPS5624939A (en) | Manufacture of semiconductor device | |
JPS5410688A (en) | Production of semiconductor device | |
JPS5724835A (en) | Semiconductor diaphragm type sensor |