JPS55113380A - Semiconductor displacement transducer - Google Patents

Semiconductor displacement transducer

Info

Publication number
JPS55113380A
JPS55113380A JP1966179A JP1966179A JPS55113380A JP S55113380 A JPS55113380 A JP S55113380A JP 1966179 A JP1966179 A JP 1966179A JP 1966179 A JP1966179 A JP 1966179A JP S55113380 A JPS55113380 A JP S55113380A
Authority
JP
Japan
Prior art keywords
strain
thickness
oxide film
region
senser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1966179A
Other languages
Japanese (ja)
Inventor
Yasutoshi Kurihara
Komei Yatsuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1966179A priority Critical patent/JPS55113380A/en
Publication of JPS55113380A publication Critical patent/JPS55113380A/en
Pending legal-status Critical Current

Links

Landscapes

  • Pressure Sensors (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

PURPOSE: To allow a semiconductor displacement transducer to accurately transmit a strain occurred between a strain senser and a strain transfer member by specifying the thickness of an oxide film formed on the strain transfer member of a semiconductor substrate in the transducer and thus improving the yield of an electric insulation between the senser and the member of the transducer.
CONSTITUTION: A strain-sensitive region 13 is formed on one main surface 12 side of a semiconductor monocrystal 11, and a semiconductor strain detector 16 having an insulated oxide film 15 and a strain transfer member 17 made of elastic metallic material are integrated through a solder layer of alloy material on the other main surface 14 of the monocrystal 11. In this configuration the oxide film 15 is formed at higher than 2μm thick, preferably 2∼7μm. The insulating yield between the senser 13 and the member 17 strongly depends upon the thickness in the region that the oxide film 15 is thin, becomes high in the region that the thickness is higher than 2μm and does not have high dependence on the thickness in that region. On the other hand, the strain transfer from the member to the senser tends to be reduced as the oxide film becomes thicker. However, the strain transfer becomes accurate in the region up to a thickness of 7μm.
COPYRIGHT: (C)1980,JPO&Japio
JP1966179A 1979-02-23 1979-02-23 Semiconductor displacement transducer Pending JPS55113380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1966179A JPS55113380A (en) 1979-02-23 1979-02-23 Semiconductor displacement transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1966179A JPS55113380A (en) 1979-02-23 1979-02-23 Semiconductor displacement transducer

Publications (1)

Publication Number Publication Date
JPS55113380A true JPS55113380A (en) 1980-09-01

Family

ID=12005421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1966179A Pending JPS55113380A (en) 1979-02-23 1979-02-23 Semiconductor displacement transducer

Country Status (1)

Country Link
JP (1) JPS55113380A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345878B2 (en) * 1973-04-24 1978-12-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5345878B2 (en) * 1973-04-24 1978-12-09

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