JPS54111796A - Semiconductor element and its manufacture - Google Patents

Semiconductor element and its manufacture

Info

Publication number
JPS54111796A
JPS54111796A JP1848078A JP1848078A JPS54111796A JP S54111796 A JPS54111796 A JP S54111796A JP 1848078 A JP1848078 A JP 1848078A JP 1848078 A JP1848078 A JP 1848078A JP S54111796 A JPS54111796 A JP S54111796A
Authority
JP
Japan
Prior art keywords
groove
film
bonding
metal film
insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1848078A
Other languages
Japanese (ja)
Inventor
Yasumasa Matsuda
Kazuji Yamada
Satoshi Shimada
Masanori Tanabe
Motohisa Nishihara
Michitaka Shimazoe
Yasutoshi Kurihara
Yoshitaka Matsuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1848078A priority Critical patent/JPS54111796A/en
Publication of JPS54111796A publication Critical patent/JPS54111796A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To make excellent the electric insulation, by coating the insulation semiconductor oxide film and the bonding metal film high in bonding force on the bonding surface of wafer with lamination, providing the groove at the end of the bonding surface when bonding is made to the bonded body with metal film, and removing the metal film.
CONSTITUTION: The rear side of the wafer 24 including the semiconductor strain gauge element 12 is made thin to a given thickness with mechanical processing, and the V-shaped groove 46 is made on the external circumference of the surface. Next, the semiconductor oxide film 22 and the metal film 43 strong in bonding force with it such as Cr are coated with lamination on the entire surface including the groove 46, and the entire surface is covered with the protective film 50 consisting of resist. After that, the film 50 in the groove 46 is removed and the film 43 is also removed by using aqua regina, the wax 51 is coated on this surface, coating the protective film 52 such as resist on the surface not having the groove 46. Next, the wax 51 in the groove 46 is removed and the element 12 is made to a single body with etching. After that, although this is fixed to the bonded body 10 with the adhesives 21, insulation is made excellent for the presence of the groove 46 without the film 43.
COPYRIGHT: (C)1979,JPO&Japio
JP1848078A 1978-02-22 1978-02-22 Semiconductor element and its manufacture Pending JPS54111796A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1848078A JPS54111796A (en) 1978-02-22 1978-02-22 Semiconductor element and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1848078A JPS54111796A (en) 1978-02-22 1978-02-22 Semiconductor element and its manufacture

Publications (1)

Publication Number Publication Date
JPS54111796A true JPS54111796A (en) 1979-09-01

Family

ID=11972791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1848078A Pending JPS54111796A (en) 1978-02-22 1978-02-22 Semiconductor element and its manufacture

Country Status (1)

Country Link
JP (1) JPS54111796A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6394630A (en) * 1986-10-08 1988-04-25 Rohm Co Ltd Processing of rear of semiconductor wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6394630A (en) * 1986-10-08 1988-04-25 Rohm Co Ltd Processing of rear of semiconductor wafer

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