JPS5671969A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS5671969A
JPS5671969A JP14896679A JP14896679A JPS5671969A JP S5671969 A JPS5671969 A JP S5671969A JP 14896679 A JP14896679 A JP 14896679A JP 14896679 A JP14896679 A JP 14896679A JP S5671969 A JPS5671969 A JP S5671969A
Authority
JP
Japan
Prior art keywords
electrode
layer
base
plate
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14896679A
Other languages
Japanese (ja)
Other versions
JPS6226591B2 (en
Inventor
Masami Iwasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14896679A priority Critical patent/JPS5671969A/en
Publication of JPS5671969A publication Critical patent/JPS5671969A/en
Publication of JPS6226591B2 publication Critical patent/JPS6226591B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To prevent a short-circuit with an electrode plate by reducing a film thickness of a part or removing a part at a lower position of an electrode plate of a base electrode. CONSTITUTION:A P<+> base layer 3' and an N<+> emitter layer 4 exist on an N<+> type Si substrate 2, and Al electrode layers 4b, 4e are formed, respectively. On the superficial layer of this part, Al is sintered to form 5b, and 5e. An electrode piping is lead out as such that an emitter electrode is split and formed at higher level than a base electrode and an Mo electrode plate 10 is pressure contacted. The thickness of the base electrode is reduced or removed by etching, however, in case of removing, it is lead to a residual peripheral electrode 4b through the layer 5b. An element surface between each electrode layer is coated with SiO2 6 and further, SiO2 16 is laminated. With this constitution, the Mo plate 10 is pressure contacted only by an emitter electrode, thus, being not short-circuited with a base electrode and further, yield and reliability being improved.
JP14896679A 1979-11-19 1979-11-19 Semiconductor element Granted JPS5671969A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14896679A JPS5671969A (en) 1979-11-19 1979-11-19 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14896679A JPS5671969A (en) 1979-11-19 1979-11-19 Semiconductor element

Publications (2)

Publication Number Publication Date
JPS5671969A true JPS5671969A (en) 1981-06-15
JPS6226591B2 JPS6226591B2 (en) 1987-06-09

Family

ID=15464639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14896679A Granted JPS5671969A (en) 1979-11-19 1979-11-19 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS5671969A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60166152U (en) * 1984-04-11 1985-11-05 株式会社明電舎 Electrode extraction structure of power semiconductor devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5418133U (en) * 1977-07-08 1979-02-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5418133U (en) * 1977-07-08 1979-02-06

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60166152U (en) * 1984-04-11 1985-11-05 株式会社明電舎 Electrode extraction structure of power semiconductor devices
JPH0526772Y2 (en) * 1984-04-11 1993-07-07

Also Published As

Publication number Publication date
JPS6226591B2 (en) 1987-06-09

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