JPS5636159A - Schottky diode - Google Patents

Schottky diode

Info

Publication number
JPS5636159A
JPS5636159A JP11041779A JP11041779A JPS5636159A JP S5636159 A JPS5636159 A JP S5636159A JP 11041779 A JP11041779 A JP 11041779A JP 11041779 A JP11041779 A JP 11041779A JP S5636159 A JPS5636159 A JP S5636159A
Authority
JP
Japan
Prior art keywords
metal layer
schottky barrier
barrier
insulating film
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11041779A
Other languages
Japanese (ja)
Inventor
Hiroshi Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11041779A priority Critical patent/JPS5636159A/en
Publication of JPS5636159A publication Critical patent/JPS5636159A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent the fall in dielectric strength, by placing a barrier metal layer at the peripheral part of a Schottky barrier to make the layer higher than the central part of the barrier to compensate for the dielectric strength fall due to side breakdown. CONSTITUTION:An insulating film 32 having an opening 321 is provided on the surface of a semiconductor substrate 31. The first metal layer 33 is produced in the center of the opening 321 of the insulating film 32 and located in contact with the semiconductor substrate 31 so that the first Schottky barrier 34 is provided between the substrate and the metal layer. The second metal layer 35 is produced at the peripheral part of the opening 321 of the insulating film 32 and located in contact with the semiconductor substrate 31 so that the second Schottky barrier 36 higher than the first Schottky barrier 34 is provided between the second metal layer and the substrate.
JP11041779A 1979-08-31 1979-08-31 Schottky diode Pending JPS5636159A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11041779A JPS5636159A (en) 1979-08-31 1979-08-31 Schottky diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11041779A JPS5636159A (en) 1979-08-31 1979-08-31 Schottky diode

Publications (1)

Publication Number Publication Date
JPS5636159A true JPS5636159A (en) 1981-04-09

Family

ID=14535231

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11041779A Pending JPS5636159A (en) 1979-08-31 1979-08-31 Schottky diode

Country Status (1)

Country Link
JP (1) JPS5636159A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4518981A (en) * 1981-11-12 1985-05-21 Advanced Micro Devices, Inc. Merged platinum silicide fuse and Schottky diode and method of manufacture thereof
JPH01266759A (en) * 1988-04-19 1989-10-24 Sanken Electric Co Ltd Schottky barrier semiconductor device
US6166446A (en) * 1997-03-18 2000-12-26 Seiko Epson Corporation Semiconductor device and fabrication process thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4518981A (en) * 1981-11-12 1985-05-21 Advanced Micro Devices, Inc. Merged platinum silicide fuse and Schottky diode and method of manufacture thereof
JPH01266759A (en) * 1988-04-19 1989-10-24 Sanken Electric Co Ltd Schottky barrier semiconductor device
US6166446A (en) * 1997-03-18 2000-12-26 Seiko Epson Corporation Semiconductor device and fabrication process thereof

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