JPS5650581A - Schottky diode - Google Patents

Schottky diode

Info

Publication number
JPS5650581A
JPS5650581A JP12539679A JP12539679A JPS5650581A JP S5650581 A JPS5650581 A JP S5650581A JP 12539679 A JP12539679 A JP 12539679A JP 12539679 A JP12539679 A JP 12539679A JP S5650581 A JPS5650581 A JP S5650581A
Authority
JP
Japan
Prior art keywords
stress
insulating film
islands
schottky diode
electric characteristics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12539679A
Other languages
Japanese (ja)
Other versions
JPS6325507B2 (en
Inventor
Akihiro Sato
Heiji Moroshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12539679A priority Critical patent/JPS5650581A/en
Publication of JPS5650581A publication Critical patent/JPS5650581A/en
Publication of JPS6325507B2 publication Critical patent/JPS6325507B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To secure electric characteristics and reliability against stress of a large power Schottky diode by dividing electrode section becoming passivation and barrier into small segments. CONSTITUTION:A surface insulating film is divided into a plurality of islands 2a, 2b,... on the main surface of a semiconductor substrate 1, Schottky barriers 3a, 3b,... are formed through the holes of the insulating film at the respective islands, and electrode 4 connected commonly to the respective barrier metals are provided thereon. Thus, stress caused by the difference of expansion coefficients and the like can be dispersed, and the adverse affect of the stress to the electric characteristics can be prevented.
JP12539679A 1979-10-01 1979-10-01 Schottky diode Granted JPS5650581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12539679A JPS5650581A (en) 1979-10-01 1979-10-01 Schottky diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12539679A JPS5650581A (en) 1979-10-01 1979-10-01 Schottky diode

Publications (2)

Publication Number Publication Date
JPS5650581A true JPS5650581A (en) 1981-05-07
JPS6325507B2 JPS6325507B2 (en) 1988-05-25

Family

ID=14909096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12539679A Granted JPS5650581A (en) 1979-10-01 1979-10-01 Schottky diode

Country Status (1)

Country Link
JP (1) JPS5650581A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03185871A (en) * 1989-12-15 1991-08-13 Toshiba Corp Schottky diode
US5148249A (en) * 1988-04-14 1992-09-15 Kabushiki Kaisha Toshiba Semiconductor protection device
JP2009032909A (en) * 2007-07-27 2009-02-12 Toko Inc Method of manufacturing schottky barrier diode
JP2014212265A (en) * 2013-04-19 2014-11-13 新電元工業株式会社 Semiconductor device and method of manufacturing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5494160U (en) * 1977-12-16 1979-07-03
JPS55105964U (en) * 1979-01-19 1980-07-24

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5494160U (en) * 1977-12-16 1979-07-03
JPS55105964U (en) * 1979-01-19 1980-07-24

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148249A (en) * 1988-04-14 1992-09-15 Kabushiki Kaisha Toshiba Semiconductor protection device
JPH03185871A (en) * 1989-12-15 1991-08-13 Toshiba Corp Schottky diode
US5148241A (en) * 1989-12-15 1992-09-15 Kabushiki Kaisha Toshiba Method of manufacturing a schottky diode device
JP2009032909A (en) * 2007-07-27 2009-02-12 Toko Inc Method of manufacturing schottky barrier diode
JP4512121B2 (en) * 2007-07-27 2010-07-28 旭化成東光パワーデバイス株式会社 Method for manufacturing Schottky barrier diode and Schottky barrier diode
JP2014212265A (en) * 2013-04-19 2014-11-13 新電元工業株式会社 Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
JPS6325507B2 (en) 1988-05-25

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