JPS5717184A - Semiconductor device for generating photoelectromotive force - Google Patents

Semiconductor device for generating photoelectromotive force

Info

Publication number
JPS5717184A
JPS5717184A JP8027281A JP8027281A JPS5717184A JP S5717184 A JPS5717184 A JP S5717184A JP 8027281 A JP8027281 A JP 8027281A JP 8027281 A JP8027281 A JP 8027281A JP S5717184 A JPS5717184 A JP S5717184A
Authority
JP
Japan
Prior art keywords
junction
shaped
section
semiconductor device
leakage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8027281A
Other languages
Japanese (ja)
Other versions
JPS6145870B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP8027281A priority Critical patent/JPS5717184A/en
Publication of JPS5717184A publication Critical patent/JPS5717184A/en
Publication of JPS6145870B2 publication Critical patent/JPS6145870B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To prevent a short circuit or a leakage between P, N semiconductor layers by forming an end section of a P-N junction or a PIN junction shaped on a conductor layer in bevel structure. CONSTITUTION:A metallic film 2 of W, Mo, Ti, etc. is shaped on an insulating carrier 1, polycrystal semiconductor layers 5, 6 by Si, Ge, etc. are molded and the P-N junction or the PIN junction is obtained. Annular opposed electrodes 8, 8' and a protective film 4 for preventing reflection are formed on the upper surface. The bevel structure is shaped to the end sections of the junction section by taperlingly etching the end sections of the P-N or PIN junction section. Accordingly, the short circuit or the leakage between a P type or an N type each semiconductor layer is removed, and a plurality of the semiconductor devices can be formed on the same substrate in block shapes. The opposed electrodes 8, 8' may be molded in comb- teeth shapes.
JP8027281A 1981-05-17 1981-05-17 Semiconductor device for generating photoelectromotive force Granted JPS5717184A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8027281A JPS5717184A (en) 1981-05-17 1981-05-17 Semiconductor device for generating photoelectromotive force

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8027281A JPS5717184A (en) 1981-05-17 1981-05-17 Semiconductor device for generating photoelectromotive force

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP49071738A Division JPS51890A (en) 1974-06-20 1974-06-20 Handotaisochi oyobi sonosakuseihoho

Publications (2)

Publication Number Publication Date
JPS5717184A true JPS5717184A (en) 1982-01-28
JPS6145870B2 JPS6145870B2 (en) 1986-10-09

Family

ID=13713644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8027281A Granted JPS5717184A (en) 1981-05-17 1981-05-17 Semiconductor device for generating photoelectromotive force

Country Status (1)

Country Link
JP (1) JPS5717184A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57184258A (en) * 1982-04-26 1982-11-12 Shunpei Yamazaki Manufacture of photoelectric conversion semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57184258A (en) * 1982-04-26 1982-11-12 Shunpei Yamazaki Manufacture of photoelectric conversion semiconductor device

Also Published As

Publication number Publication date
JPS6145870B2 (en) 1986-10-09

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