JPS5615037A - Manufacture of alloy junction type semiconductor device - Google Patents
Manufacture of alloy junction type semiconductor deviceInfo
- Publication number
- JPS5615037A JPS5615037A JP9244579A JP9244579A JPS5615037A JP S5615037 A JPS5615037 A JP S5615037A JP 9244579 A JP9244579 A JP 9244579A JP 9244579 A JP9244579 A JP 9244579A JP S5615037 A JPS5615037 A JP S5615037A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- alloy
- type semiconductor
- manufacture
- junction type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Abstract
PURPOSE:To eliminate the necessity of a step of removing a diffused layer and thus simplify the step of manufacturing an alloy junction type semiconductor device by attaching an alloy metal to a high density diffused layer formed in a semiconductor substrate and alloying the metal through the diffused layer with a part of the substrate. CONSTITUTION:High density diffused layers 2a, 2b are formed on both side surfaces of an N-type silicon wafer 1. Then, a P-type alloy metal such as, for example, Al 3 is attached to the surface of one diffused layer 2a, the Al 3 is alloyed to form a P-type alloy layer 4 having a P-N junction at a part of the wafer 1. Thereafter, the vicinity of the P-N junction is etched and removed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9244579A JPS5615037A (en) | 1979-07-18 | 1979-07-18 | Manufacture of alloy junction type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9244579A JPS5615037A (en) | 1979-07-18 | 1979-07-18 | Manufacture of alloy junction type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5615037A true JPS5615037A (en) | 1981-02-13 |
Family
ID=14054599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9244579A Pending JPS5615037A (en) | 1979-07-18 | 1979-07-18 | Manufacture of alloy junction type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5615037A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5890466U (en) * | 1981-12-11 | 1983-06-18 | 沖電気工業株式会社 | Banknote discrimination device |
-
1979
- 1979-07-18 JP JP9244579A patent/JPS5615037A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5890466U (en) * | 1981-12-11 | 1983-06-18 | 沖電気工業株式会社 | Banknote discrimination device |
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