JPS5687355A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5687355A
JPS5687355A JP16514479A JP16514479A JPS5687355A JP S5687355 A JPS5687355 A JP S5687355A JP 16514479 A JP16514479 A JP 16514479A JP 16514479 A JP16514479 A JP 16514479A JP S5687355 A JPS5687355 A JP S5687355A
Authority
JP
Japan
Prior art keywords
region
type
layer
island
resistance layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16514479A
Other languages
Japanese (ja)
Inventor
Masanori Koshobu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP16514479A priority Critical patent/JPS5687355A/en
Publication of JPS5687355A publication Critical patent/JPS5687355A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Abstract

PURPOSE:To elevate the integration of the semiconductor device without increasing the manufacturing processes by a method wherein an impurity region to be used as a resistance layer or an interconnection layer to be formed in an island region being separated by a P-N junction, is made to be the region provided at the same time with the formation of a isolation region. CONSTITUTION:For example, an N<+> type region 11 and a surrounding P<+> type region 12 are provided selectively on a P type substrate 10, and an N<-> type epitaxial layer 13 is formed on the whole surface of the substrate. The P<+> type isolation region 12a is formed connecting with the previously formed P<+> type region 12 to form the island region 13a. At this time, the P<+> type region 14 is formed simultaneously in the island region. This P<+> type region 14 is used as it is as the low resistance layer or as the crossover interconnection layer. Accordingly the resistance layer or the interconnection layer can be provided without increasing the manufacturing process, and the integration can be elevated.
JP16514479A 1979-12-19 1979-12-19 Semiconductor device Pending JPS5687355A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16514479A JPS5687355A (en) 1979-12-19 1979-12-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16514479A JPS5687355A (en) 1979-12-19 1979-12-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5687355A true JPS5687355A (en) 1981-07-15

Family

ID=15806718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16514479A Pending JPS5687355A (en) 1979-12-19 1979-12-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5687355A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01305536A (en) * 1988-06-03 1989-12-08 Fuji Electric Co Ltd Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01305536A (en) * 1988-06-03 1989-12-08 Fuji Electric Co Ltd Semiconductor integrated circuit device

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