JPS54158876A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54158876A JPS54158876A JP6856178A JP6856178A JPS54158876A JP S54158876 A JPS54158876 A JP S54158876A JP 6856178 A JP6856178 A JP 6856178A JP 6856178 A JP6856178 A JP 6856178A JP S54158876 A JPS54158876 A JP S54158876A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- electrode
- collector
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Abstract
PURPOSE: To make a chip size small on the whole with no need for epitaxial grown by forming several N+-type collector regions in a P-type semiconductor substrate by diffusion and then by providing a P+-type base region and a N+-type emitter region in it.
CONSTITUTION: When an IC is constituted by forming two PNP-type transistors in a P+-type semiconductor substrate, N+-type collector region 20 is formed by selective diffusion in P+-type semiconductor substrate 1 first. Next, P+-type base region 6 in region 20 and N+-type emitter region 7 in it are provided sequentially by selective diffusion, and collector electrode 9, base electrode 10, and emitter electrode 11 are respectively fitted to regions 20, 6 and 7. Then, substrate electrode 12 is bonded to both entire sides of substrate 1. In this way, no epitaxial layer is provided to an IC which requires no so high reverse dielectric strength between the base and collector, thereby constituting the device in an extremely-simple process.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6856178A JPS54158876A (en) | 1978-06-06 | 1978-06-06 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6856178A JPS54158876A (en) | 1978-06-06 | 1978-06-06 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54158876A true JPS54158876A (en) | 1979-12-15 |
Family
ID=13377290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6856178A Pending JPS54158876A (en) | 1978-06-06 | 1978-06-06 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54158876A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5022582A (en) * | 1973-05-25 | 1975-03-11 |
-
1978
- 1978-06-06 JP JP6856178A patent/JPS54158876A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5022582A (en) * | 1973-05-25 | 1975-03-11 |
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