JPS57188860A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57188860A
JPS57188860A JP7352581A JP7352581A JPS57188860A JP S57188860 A JPS57188860 A JP S57188860A JP 7352581 A JP7352581 A JP 7352581A JP 7352581 A JP7352581 A JP 7352581A JP S57188860 A JPS57188860 A JP S57188860A
Authority
JP
Japan
Prior art keywords
type
substrate
resistance
layers
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7352581A
Other languages
Japanese (ja)
Inventor
Yuji Arai
Toshihiro Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7352581A priority Critical patent/JPS57188860A/en
Publication of JPS57188860A publication Critical patent/JPS57188860A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To facilitate formation of resistance regions for a bipolar MOSIC by a device wherein in a growth layer of reverse conductivity type provided on a substrate and including buried layers is formed a region having the same conductivity type as that of the substrate and reaching the buried layer. CONSTITUTION:N<+> type buried layers are formed in a P type Si substrate and N<-> type layers are formed thereon through epitaxial growth. Then, a P type well for a MOST is formed through diffusion, and at the same time another P type well is formed above the N<+> type buried layer. This P type well above the buried layer is used as a resistance region. By so doing, it becomes possible to attain high resistance without a need of modifying the process and to reduce an area of the resistance correspondingly.
JP7352581A 1981-05-18 1981-05-18 Semiconductor device Pending JPS57188860A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7352581A JPS57188860A (en) 1981-05-18 1981-05-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7352581A JPS57188860A (en) 1981-05-18 1981-05-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57188860A true JPS57188860A (en) 1982-11-19

Family

ID=13520734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7352581A Pending JPS57188860A (en) 1981-05-18 1981-05-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57188860A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49115690A (en) * 1973-03-07 1974-11-05
JPS55165669A (en) * 1979-06-11 1980-12-24 Hitachi Ltd Bipolar-mos device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49115690A (en) * 1973-03-07 1974-11-05
JPS55165669A (en) * 1979-06-11 1980-12-24 Hitachi Ltd Bipolar-mos device

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