JPS5541789A - Integrated semiconductor device and manufacturing the same - Google Patents

Integrated semiconductor device and manufacturing the same

Info

Publication number
JPS5541789A
JPS5541789A JP11616578A JP11616578A JPS5541789A JP S5541789 A JPS5541789 A JP S5541789A JP 11616578 A JP11616578 A JP 11616578A JP 11616578 A JP11616578 A JP 11616578A JP S5541789 A JPS5541789 A JP S5541789A
Authority
JP
Japan
Prior art keywords
film
region
type
regions
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11616578A
Other languages
Japanese (ja)
Inventor
Kazuo Terada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11616578A priority Critical patent/JPS5541789A/en
Publication of JPS5541789A publication Critical patent/JPS5541789A/en
Pending legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To use a first conductive type region as an active region, and also to use an insulated film provided on said first conductive region and a second conductive region provided therebelow as an inactive region thereby to obtain an IC of a small floating capacity.
CONSTITUTION: A P-type layer 12 is caused to epitaxially grow on an N-type Si substrate 11 and covered with a SiO2 film 21, and a Si3N4 film 22 is provided on parts becoming active regions at both ends of said film 21. Then, the film 22 is subjected to heat treatment by use of an antioxidation mask, and a thick SiO2 film 23 is produced in an inactive region within a layer 12 encircled by said mask. Thereafter, ions are injected in the films with energy not penetrating the film 23 but penetrating laminated films 22 and 21 thereby to form regions 24 therebelow. Then, P-type wells 13 are formed below the regions 24 by extrusion diffusion. Then, the thick film 23 is removed, and a P-type region 14 which becomes a guard ring is diffusion-formed in the recessed layer 12. Thereafter, the recessed part is filled with a SiO2 film 15, and films 21 and 22 are removed, source and drain regions 18 being provided in the active region thus formed.
COPYRIGHT: (C)1980,JPO&Japio
JP11616578A 1978-09-20 1978-09-20 Integrated semiconductor device and manufacturing the same Pending JPS5541789A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11616578A JPS5541789A (en) 1978-09-20 1978-09-20 Integrated semiconductor device and manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11616578A JPS5541789A (en) 1978-09-20 1978-09-20 Integrated semiconductor device and manufacturing the same

Publications (1)

Publication Number Publication Date
JPS5541789A true JPS5541789A (en) 1980-03-24

Family

ID=14680380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11616578A Pending JPS5541789A (en) 1978-09-20 1978-09-20 Integrated semiconductor device and manufacturing the same

Country Status (1)

Country Link
JP (1) JPS5541789A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6147661A (en) * 1984-08-15 1986-03-08 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6147661A (en) * 1984-08-15 1986-03-08 Oki Electric Ind Co Ltd Manufacture of semiconductor device

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