JPS5541789A - Integrated semiconductor device and manufacturing the same - Google Patents
Integrated semiconductor device and manufacturing the sameInfo
- Publication number
- JPS5541789A JPS5541789A JP11616578A JP11616578A JPS5541789A JP S5541789 A JPS5541789 A JP S5541789A JP 11616578 A JP11616578 A JP 11616578A JP 11616578 A JP11616578 A JP 11616578A JP S5541789 A JPS5541789 A JP S5541789A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- type
- regions
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To use a first conductive type region as an active region, and also to use an insulated film provided on said first conductive region and a second conductive region provided therebelow as an inactive region thereby to obtain an IC of a small floating capacity.
CONSTITUTION: A P-type layer 12 is caused to epitaxially grow on an N-type Si substrate 11 and covered with a SiO2 film 21, and a Si3N4 film 22 is provided on parts becoming active regions at both ends of said film 21. Then, the film 22 is subjected to heat treatment by use of an antioxidation mask, and a thick SiO2 film 23 is produced in an inactive region within a layer 12 encircled by said mask. Thereafter, ions are injected in the films with energy not penetrating the film 23 but penetrating laminated films 22 and 21 thereby to form regions 24 therebelow. Then, P-type wells 13 are formed below the regions 24 by extrusion diffusion. Then, the thick film 23 is removed, and a P-type region 14 which becomes a guard ring is diffusion-formed in the recessed layer 12. Thereafter, the recessed part is filled with a SiO2 film 15, and films 21 and 22 are removed, source and drain regions 18 being provided in the active region thus formed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11616578A JPS5541789A (en) | 1978-09-20 | 1978-09-20 | Integrated semiconductor device and manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11616578A JPS5541789A (en) | 1978-09-20 | 1978-09-20 | Integrated semiconductor device and manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5541789A true JPS5541789A (en) | 1980-03-24 |
Family
ID=14680380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11616578A Pending JPS5541789A (en) | 1978-09-20 | 1978-09-20 | Integrated semiconductor device and manufacturing the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5541789A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6147661A (en) * | 1984-08-15 | 1986-03-08 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1978
- 1978-09-20 JP JP11616578A patent/JPS5541789A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6147661A (en) * | 1984-08-15 | 1986-03-08 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS567463A (en) | Semiconductor device and its manufacture | |
JPS5563840A (en) | Semiconductor integrated device | |
JPS5356972A (en) | Mesa type semiconductor device | |
JPS5541789A (en) | Integrated semiconductor device and manufacturing the same | |
JPS5459090A (en) | Semiconductor device and its manufacture | |
JPS5522879A (en) | Insulation gate type field effect semiconductor device | |
JPS54141596A (en) | Semiconductor device | |
JPS5583267A (en) | Method of fabricating semiconductor device | |
JPS54102980A (en) | Mos-type semiconductor device and its manufacture | |
JPS5588372A (en) | Lateral type transistor | |
JPS522180A (en) | Method of fabricating mos semiconductor integrated circuit | |
JPS5574181A (en) | Preparing junction type field effect transistor | |
JPS5550661A (en) | Insulated gate type field effect semiconductor device | |
JPS54101289A (en) | Semiconductor device | |
JPS5522878A (en) | Insulation gate type field effect semiconductor device | |
JPS5265689A (en) | Semiconductor integrated circuit and its production | |
JPS5370685A (en) | Production of semiconductor device | |
JPS5568650A (en) | Manufacturing method of semiconductor device | |
JPS5368990A (en) | Production of semiconductor integrated circuit | |
JPS54158889A (en) | Manufacture of semiconductor device | |
JPS5492180A (en) | Manufacture of semiconductor device | |
JPS55132062A (en) | Semiconductor memory device | |
JPS5580334A (en) | Manufacture of semiconductor device | |
JPS5595365A (en) | Manufacture of semiconductor device | |
JPS5484980A (en) | Semiconductor device |