JPS5678152A - Semiconductor integrated circuit device and manufacture thereof - Google Patents
Semiconductor integrated circuit device and manufacture thereofInfo
- Publication number
- JPS5678152A JPS5678152A JP15437779A JP15437779A JPS5678152A JP S5678152 A JPS5678152 A JP S5678152A JP 15437779 A JP15437779 A JP 15437779A JP 15437779 A JP15437779 A JP 15437779A JP S5678152 A JPS5678152 A JP S5678152A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- island
- layer
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Abstract
PURPOSE:To improve a current amplifying rate of an I<2>L element, by a method wherein, when the I<2>L element and a bipolar transistor are indivudually placed in island-shaped regions which are separated from each other, and most of carriers, poured into a base region, of which the I<2>L element consists, are supplied from a submerged emitter region of a high impurity density. CONSTITUTION:Two type N<+> submerged regions 23 are formed in a type P Si substrate, and a type N layer 21 is epitaxially grown on the whole surface including the regions 23. The layer 21 is separated into island-shaped layers 34 and 35 including each region 23 by means of a region 22. Type P regions 25 and 26 and a type N<+> region 27 positioned in the region 26 are formed in the one layer 34. An I<2>L element consists of the region 26, the island-shaped layer 34, and the region 25, and an inverse transistor consists of the region 23, the island-shaped layer 34, and the regions 25 and 27. A type P region 24 and an N<+> region 28 located therein are also formed in the island-shaped layer 35, and a bipolar type transistor consists of them.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15437779A JPS5678152A (en) | 1979-11-30 | 1979-11-30 | Semiconductor integrated circuit device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15437779A JPS5678152A (en) | 1979-11-30 | 1979-11-30 | Semiconductor integrated circuit device and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5678152A true JPS5678152A (en) | 1981-06-26 |
JPH0122743B2 JPH0122743B2 (en) | 1989-04-27 |
Family
ID=15582813
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15437779A Granted JPS5678152A (en) | 1979-11-30 | 1979-11-30 | Semiconductor integrated circuit device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5678152A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52106278A (en) * | 1976-03-03 | 1977-09-06 | Mitsubishi Electric Corp | Manufacture of bipolar cmos semiconductor device |
JPS5338990A (en) * | 1976-09-22 | 1978-04-10 | Hitachi Ltd | Iil semiconductor device |
JPS5387186A (en) * | 1977-01-12 | 1978-08-01 | Hitachi Ltd | Semiconductor ingegrated circuit device |
JPS53101960A (en) * | 1977-02-18 | 1978-09-05 | Toshiba Corp | Oscillation circuit device |
-
1979
- 1979-11-30 JP JP15437779A patent/JPS5678152A/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52106278A (en) * | 1976-03-03 | 1977-09-06 | Mitsubishi Electric Corp | Manufacture of bipolar cmos semiconductor device |
JPS5338990A (en) * | 1976-09-22 | 1978-04-10 | Hitachi Ltd | Iil semiconductor device |
JPS5387186A (en) * | 1977-01-12 | 1978-08-01 | Hitachi Ltd | Semiconductor ingegrated circuit device |
JPS53101960A (en) * | 1977-02-18 | 1978-09-05 | Toshiba Corp | Oscillation circuit device |
Also Published As
Publication number | Publication date |
---|---|
JPH0122743B2 (en) | 1989-04-27 |
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