JPS52116086A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS52116086A JPS52116086A JP3333576A JP3333576A JPS52116086A JP S52116086 A JPS52116086 A JP S52116086A JP 3333576 A JP3333576 A JP 3333576A JP 3333576 A JP3333576 A JP 3333576A JP S52116086 A JPS52116086 A JP S52116086A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- concentration
- improve
- transistor
- making
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To improve alpha1 of a longitudinal npn type transistor by making higher the concentration of impurities in the epitaxial layer on a n<+> type substrate and improve the characteristics of I<2>L by making lower the concentration of the base in transverse pup transistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3333576A JPS52116086A (en) | 1976-03-25 | 1976-03-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3333576A JPS52116086A (en) | 1976-03-25 | 1976-03-25 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52116086A true JPS52116086A (en) | 1977-09-29 |
Family
ID=12383677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3333576A Pending JPS52116086A (en) | 1976-03-25 | 1976-03-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52116086A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57113272A (en) * | 1980-12-29 | 1982-07-14 | Pioneer Electronic Corp | I2l integrated circuit device |
-
1976
- 1976-03-25 JP JP3333576A patent/JPS52116086A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57113272A (en) * | 1980-12-29 | 1982-07-14 | Pioneer Electronic Corp | I2l integrated circuit device |
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