JPS5386183A - Iil type semiconductor device - Google Patents

Iil type semiconductor device

Info

Publication number
JPS5386183A
JPS5386183A JP14649576A JP14649576A JPS5386183A JP S5386183 A JPS5386183 A JP S5386183A JP 14649576 A JP14649576 A JP 14649576A JP 14649576 A JP14649576 A JP 14649576A JP S5386183 A JPS5386183 A JP S5386183A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
iil
iil type
type transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14649576A
Other languages
Japanese (ja)
Inventor
Minoru Enomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14649576A priority Critical patent/JPS5386183A/en
Publication of JPS5386183A publication Critical patent/JPS5386183A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Abstract

PURPOSE:To achieve the improvement in high speedness by maintaining the base of a lateral type transistor Q<1> at a level slightly higher than the emitter of a vertical type transistor Q<2> so that Q<1> does not saturate when Q<2> is on.
JP14649576A 1976-12-08 1976-12-08 Iil type semiconductor device Pending JPS5386183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14649576A JPS5386183A (en) 1976-12-08 1976-12-08 Iil type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14649576A JPS5386183A (en) 1976-12-08 1976-12-08 Iil type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5386183A true JPS5386183A (en) 1978-07-29

Family

ID=15408906

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14649576A Pending JPS5386183A (en) 1976-12-08 1976-12-08 Iil type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5386183A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0365204A (en) * 1989-07-21 1991-03-20 Soc Prod Nestle Sa Filtering device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0365204A (en) * 1989-07-21 1991-03-20 Soc Prod Nestle Sa Filtering device

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