JPS5338990A - Iil semiconductor device - Google Patents

Iil semiconductor device

Info

Publication number
JPS5338990A
JPS5338990A JP11307676A JP11307676A JPS5338990A JP S5338990 A JPS5338990 A JP S5338990A JP 11307676 A JP11307676 A JP 11307676A JP 11307676 A JP11307676 A JP 11307676A JP S5338990 A JPS5338990 A JP S5338990A
Authority
JP
Japan
Prior art keywords
semiconductor device
iil
iil semiconductor
npn
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11307676A
Other languages
Japanese (ja)
Inventor
Noboru Horie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11307676A priority Critical patent/JPS5338990A/en
Publication of JPS5338990A publication Critical patent/JPS5338990A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Abstract

PURPOSE:To obtain an I<2>L containing a high voltage-resistance TR by forming the emitter layer of the forward nPn transistor TR and the collector of npn TR through the same diffusion and securing a different width for the both bases.
JP11307676A 1976-09-22 1976-09-22 Iil semiconductor device Pending JPS5338990A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11307676A JPS5338990A (en) 1976-09-22 1976-09-22 Iil semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11307676A JPS5338990A (en) 1976-09-22 1976-09-22 Iil semiconductor device

Publications (1)

Publication Number Publication Date
JPS5338990A true JPS5338990A (en) 1978-04-10

Family

ID=14602861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11307676A Pending JPS5338990A (en) 1976-09-22 1976-09-22 Iil semiconductor device

Country Status (1)

Country Link
JP (1) JPS5338990A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678152A (en) * 1979-11-30 1981-06-26 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPS5739567A (en) * 1980-07-18 1982-03-04 Nec Corp Manufacture of semiconductor device
JPS5762552A (en) * 1980-10-01 1982-04-15 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS57196562A (en) * 1981-05-28 1982-12-02 Nec Corp Manufacture of semiconductor device
US4546539A (en) * 1982-12-08 1985-10-15 Harris Corporation I2 L Structure and fabrication process compatible with high voltage bipolar transistors

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678152A (en) * 1979-11-30 1981-06-26 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPH0122743B2 (en) * 1979-11-30 1989-04-27 Hitachi Ltd
JPS5739567A (en) * 1980-07-18 1982-03-04 Nec Corp Manufacture of semiconductor device
JPS5762552A (en) * 1980-10-01 1982-04-15 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPH0216018B2 (en) * 1980-10-01 1990-04-13 Oki Electric Ind Co Ltd
JPS57196562A (en) * 1981-05-28 1982-12-02 Nec Corp Manufacture of semiconductor device
US4546539A (en) * 1982-12-08 1985-10-15 Harris Corporation I2 L Structure and fabrication process compatible with high voltage bipolar transistors

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