JPS545391A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS545391A
JPS545391A JP6982677A JP6982677A JPS545391A JP S545391 A JPS545391 A JP S545391A JP 6982677 A JP6982677 A JP 6982677A JP 6982677 A JP6982677 A JP 6982677A JP S545391 A JPS545391 A JP S545391A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
dierectric
utilizing
produce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6982677A
Other languages
Japanese (ja)
Inventor
Kaoru Niino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6982677A priority Critical patent/JPS545391A/en
Publication of JPS545391A publication Critical patent/JPS545391A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233Integrated injection logic structures [I2L]
    • H01L27/0244I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To produce the high-speed I<2>L through production of a high dierectric strength transistor and I<2>L within the same chip by utilizing one of the three epitaxial layers for the diffusion source.
JP6982677A 1977-06-15 1977-06-15 Manufacture of semiconductor device Pending JPS545391A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6982677A JPS545391A (en) 1977-06-15 1977-06-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6982677A JPS545391A (en) 1977-06-15 1977-06-15 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS545391A true JPS545391A (en) 1979-01-16

Family

ID=13413940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6982677A Pending JPS545391A (en) 1977-06-15 1977-06-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS545391A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58180204A (en) * 1982-04-19 1983-10-21 Kuri Kagaku Sochi Kk Separation using osmotic evaporation membrane
US5217580A (en) * 1992-11-03 1993-06-08 Chen Ching Dien Water distiller
US6277246B1 (en) * 1997-02-03 2001-08-21 Air Liquide America Corporation Purification of electronic specialty gases by vapor phase transfilling

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58180204A (en) * 1982-04-19 1983-10-21 Kuri Kagaku Sochi Kk Separation using osmotic evaporation membrane
US5217580A (en) * 1992-11-03 1993-06-08 Chen Ching Dien Water distiller
US6277246B1 (en) * 1997-02-03 2001-08-21 Air Liquide America Corporation Purification of electronic specialty gases by vapor phase transfilling
US6517686B2 (en) 1997-02-03 2003-02-11 L'air Liquide - Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude Apparatus for purification of electronic specialty gases by vapor phase transfilling

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