JPS57202781A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57202781A JPS57202781A JP8840281A JP8840281A JPS57202781A JP S57202781 A JPS57202781 A JP S57202781A JP 8840281 A JP8840281 A JP 8840281A JP 8840281 A JP8840281 A JP 8840281A JP S57202781 A JPS57202781 A JP S57202781A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- impurity density
- region
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 9
- 239000000758 substrate Substances 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 2
- 230000003321 amplification Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Abstract
PURPOSE:To increase the DC current amplification factor in the large current region of the titled device without increasing the occupation area of a transistor by a method wherein, in the transistor in which a semiconductor substrate with a low impurity density layer located on the high impurity density layer, a base diffusion layer is contacted to the high impurity density layer. CONSTITUTION:A P type layer 12, the impurity density of which becomes lower as going nearer to the surface, is epitaxially grown on the P<+> type Si substrate 11 of a high impurity density, and an N type base region 13 is formed in the layer 12 by diffusing N type impurities in such a manner that they reach the high density impurity layer of the substrate 11. Then, a P type emitter region 14 is provided in the region 13 by diffusing P type impurities, and a P-N-P type transistor is formed. Through these procedures, the IC characteristics of hFF and VCE (Sat) can be improved by contacting the region 13 to the high impurity density layer of the substrate 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8840281A JPS57202781A (en) | 1981-06-09 | 1981-06-09 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8840281A JPS57202781A (en) | 1981-06-09 | 1981-06-09 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57202781A true JPS57202781A (en) | 1982-12-11 |
Family
ID=13941798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8840281A Pending JPS57202781A (en) | 1981-06-09 | 1981-06-09 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57202781A (en) |
-
1981
- 1981-06-09 JP JP8840281A patent/JPS57202781A/en active Pending
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