JPS5627955A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5627955A
JPS5627955A JP10400079A JP10400079A JPS5627955A JP S5627955 A JPS5627955 A JP S5627955A JP 10400079 A JP10400079 A JP 10400079A JP 10400079 A JP10400079 A JP 10400079A JP S5627955 A JPS5627955 A JP S5627955A
Authority
JP
Japan
Prior art keywords
epitaxial layer
region
base region
layer
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10400079A
Other languages
Japanese (ja)
Inventor
Tatsuhaya Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10400079A priority Critical patent/JPS5627955A/en
Publication of JPS5627955A publication Critical patent/JPS5627955A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration

Abstract

PURPOSE:To decrease the area resistance of a collector by decreasing the thickness of the high resistance portion of an epitaxial layer. CONSTITUTION:An n<->epitaxial layer 3 is formed on a p<->substrate 1 via an n<+> embedded layer 2. Then, N<+>impurities introduced in the n<->epitaxial layer 3 are risen up, and an n<->impurity region 4 whose concentration is higher than that of an n<->epitaxial layer is formed on said n<->epitaxial layer on the layer 3. A p<->type diffused base region 5 is formed on the surface of the n<->epitaxial layer. On the surface of said Ptype base region and on the surface of the neighbouring n<->epitaxial layer, an n<->diffused emitter region 6 and an n<+>diffused collector lead region 7 are formed, respectively. In the case of a diode, the p-base region and a portion of the n<+>collector lead region are short-circuited by an aluminum electrode 8, and the portion between the n<+>emitter region and the P<+>base region is constituted as a diode.
JP10400079A 1979-08-17 1979-08-17 Semiconductor integrated circuit device Pending JPS5627955A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10400079A JPS5627955A (en) 1979-08-17 1979-08-17 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10400079A JPS5627955A (en) 1979-08-17 1979-08-17 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5627955A true JPS5627955A (en) 1981-03-18

Family

ID=14369010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10400079A Pending JPS5627955A (en) 1979-08-17 1979-08-17 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5627955A (en)

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