JPS5593262A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5593262A
JPS5593262A JP80979A JP80979A JPS5593262A JP S5593262 A JPS5593262 A JP S5593262A JP 80979 A JP80979 A JP 80979A JP 80979 A JP80979 A JP 80979A JP S5593262 A JPS5593262 A JP S5593262A
Authority
JP
Japan
Prior art keywords
scr
gate
photo
driving
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP80979A
Other languages
Japanese (ja)
Inventor
Tomonobu Yoshitake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP80979A priority Critical patent/JPS5593262A/en
Publication of JPS5593262A publication Critical patent/JPS5593262A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain photo-driving type SCR having large value of dV/dt by building a cathode of photo-driving SCR into large-capacity SCR's gate as a component of one substrate.
CONSTITUTION: Photo-driving SCR 21 and driven SCR 20 are formed in n-type silicon substrate 1 with anode 11' set for common use. The gate 7 of SCR 20 is wire-connected to cathode 8 of SCR 21. If SCR 21 is turned on by light, electric current running through said SCR flows into gate 7, causing SCR 20 to be turned on SCR 21 can be considerably scaled down because it has only to supply gate current to SCR 20. For this reason, the effective area of pn-junction is minimized, resulting in the diminution of the depression layer and an increase in dv/dt caused by a reduction of running current.
COPYRIGHT: (C)1980,JPO&Japio
JP80979A 1979-01-05 1979-01-05 Semiconductor device Pending JPS5593262A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP80979A JPS5593262A (en) 1979-01-05 1979-01-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP80979A JPS5593262A (en) 1979-01-05 1979-01-05 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5593262A true JPS5593262A (en) 1980-07-15

Family

ID=11484003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP80979A Pending JPS5593262A (en) 1979-01-05 1979-01-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5593262A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6094771A (en) * 1983-10-28 1985-05-27 Mitsubishi Electric Corp Light-trigger thyristor
JPS6159776A (en) * 1984-08-30 1986-03-27 Semiconductor Res Found Phototrigger thyristor
JPS61270867A (en) * 1985-05-25 1986-12-01 Matsushita Electric Works Ltd Semiconductor device
US4977433A (en) * 1989-10-27 1990-12-11 University Of Colorado Foundation, Inc. Optoelectronic semiconductor device
US5136353A (en) * 1990-05-10 1992-08-04 The University Of Colorado Foundation, Inc. Optical switch

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544757A (en) * 1978-09-25 1980-03-29 Nec Corp Photo-thyristor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544757A (en) * 1978-09-25 1980-03-29 Nec Corp Photo-thyristor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6094771A (en) * 1983-10-28 1985-05-27 Mitsubishi Electric Corp Light-trigger thyristor
JPS6159776A (en) * 1984-08-30 1986-03-27 Semiconductor Res Found Phototrigger thyristor
JPH0469434B2 (en) * 1984-08-30 1992-11-06 Handotai Kenkyu Shinkokai
JPS61270867A (en) * 1985-05-25 1986-12-01 Matsushita Electric Works Ltd Semiconductor device
JPH0551187B2 (en) * 1985-05-25 1993-07-30 Matsushita Electric Works Ltd
US4977433A (en) * 1989-10-27 1990-12-11 University Of Colorado Foundation, Inc. Optoelectronic semiconductor device
US5136353A (en) * 1990-05-10 1992-08-04 The University Of Colorado Foundation, Inc. Optical switch

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