JPS57122573A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57122573A JPS57122573A JP20157281A JP20157281A JPS57122573A JP S57122573 A JPS57122573 A JP S57122573A JP 20157281 A JP20157281 A JP 20157281A JP 20157281 A JP20157281 A JP 20157281A JP S57122573 A JPS57122573 A JP S57122573A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- thyristor
- type
- substrate
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
PURPOSE:To prevent the overvoltage damage of a semiconductor device due to the vibration voltage during a reverse recovery period by setting the specific resistance of a P type Si substrate of a diode having a P<+> P-N junction formed with a P type Si substrate to a value higher than the specific value. CONSTITUTION:A diode Si plate 100 having an P<+> P-N junction formed with a P type Si substrate is joined integrally in a direction for correcting the reverse blocking capaity of a thyristor Si plate 200 having a P-N<+>N-P-N junction. An anode electrode 4 is formed integrally with the surface of the Si plate 100, and a cathode electrode 5 and a gate electrode 15 are formed integrally with the surface of the plate 200. In the thyristor of this structure, the specific resistance of a central P type layer 2 of the plate 100 is set to a value higher than 1kOMEGAcm. In this manner, the thyristor can be prevented from causing the overvoltage damage due to the vibration voltage during the reverse recovery period, thereby enabling the increase in the withstand voltage of the thyristor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20157281A JPS57122573A (en) | 1981-12-16 | 1981-12-16 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20157281A JPS57122573A (en) | 1981-12-16 | 1981-12-16 | Semiconductor device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6761378A Division JPS54159189A (en) | 1978-06-07 | 1978-06-07 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57122573A true JPS57122573A (en) | 1982-07-30 |
Family
ID=16443277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20157281A Pending JPS57122573A (en) | 1981-12-16 | 1981-12-16 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57122573A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0182008A2 (en) * | 1984-10-15 | 1986-05-28 | Mitsubishi Denki Kabushiki Kaisha | Thyristor device with protection means |
-
1981
- 1981-12-16 JP JP20157281A patent/JPS57122573A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0182008A2 (en) * | 1984-10-15 | 1986-05-28 | Mitsubishi Denki Kabushiki Kaisha | Thyristor device with protection means |
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