JPS55148459A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55148459A JPS55148459A JP5597379A JP5597379A JPS55148459A JP S55148459 A JPS55148459 A JP S55148459A JP 5597379 A JP5597379 A JP 5597379A JP 5597379 A JP5597379 A JP 5597379A JP S55148459 A JPS55148459 A JP S55148459A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- junction
- bevel
- negative
- wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 235000012431 wafers Nutrition 0.000 abstract 8
- 230000003449 preventive effect Effects 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000003014 reinforcing effect Effects 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 230000001502 supplementing effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10156—Shape being other than a cuboid at the periphery
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To simplify the structure of a semiconductor element and improve the reliability of the element by securing a diode wafer to a reverse conducting type thyristor wafer in a direction for supplementing the reverse preventive capacity thereof and imparting negative bevel to the voltage preventive junction of both wafers. CONSTITUTION:A semiconductor device 1 consists integrally of a reverse conducting thyristor wafer 2 having PNPN-junction, a diode wafer 3 having one PN-junction, an anode electrode 24 and a cathode electrode 24'. When integrating these wafers 2, 3, it is preferred to employ a thin P-type low specific resistance silicon plate as an intermediate supporting plate 22. The oblique angle of the bevel 19 of the wafer 2 is negative with respect to the central PN-junction 11. The bevel 20 of the wafer 30 is negative with respect to the PN-junction 18. Since it does not thus require a reinforcing member for protecting the end surface shaping portions on both outside surfaces of the anode and the cathode, it can simplify the structure of the element and improve the reliability thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5597379A JPS55148459A (en) | 1979-05-08 | 1979-05-08 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5597379A JPS55148459A (en) | 1979-05-08 | 1979-05-08 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55148459A true JPS55148459A (en) | 1980-11-19 |
| JPS6123668B2 JPS6123668B2 (en) | 1986-06-06 |
Family
ID=13014012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5597379A Granted JPS55148459A (en) | 1979-05-08 | 1979-05-08 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55148459A (en) |
-
1979
- 1979-05-08 JP JP5597379A patent/JPS55148459A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6123668B2 (en) | 1986-06-06 |
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