JPS55128859A - Surge preventive circuit for bipolar integrated circuit - Google Patents

Surge preventive circuit for bipolar integrated circuit

Info

Publication number
JPS55128859A
JPS55128859A JP3723779A JP3723779A JPS55128859A JP S55128859 A JPS55128859 A JP S55128859A JP 3723779 A JP3723779 A JP 3723779A JP 3723779 A JP3723779 A JP 3723779A JP S55128859 A JPS55128859 A JP S55128859A
Authority
JP
Japan
Prior art keywords
circuit
surge
type
layer
external connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3723779A
Other languages
Japanese (ja)
Inventor
Koji Shinomiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3723779A priority Critical patent/JPS55128859A/en
Publication of JPS55128859A publication Critical patent/JPS55128859A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To eliminate the surge of a bipolar integrated circuit specially by forming a PN-junction between an external connection terminal presenting high impedance and an internal circuit as the part of the internal circuit. CONSTITUTION:An N-type epitaxial layer on a P<+>-type substrate is isolated by a P<+>-type layer to form N<+>-layers thereon. A P-type layer is formed in space from the N<+>-layers on the surface of an island-like N-type epitaxial layer on the N<+>-type buried layer to form a wire layer as predetermined. When positive surge voltage is now applied to an external connection terminal 2, surge current is flowed to a power line V1 of an internal circuit 3 through a diode D1 and flowed out through a power supply portion to the ground of an IC. When negative surge current is applied to the terminal 2, the surge current is flowed out through a diode D2 and the ground of the circuit 3 to the ground connection of the IC. Thus, the diodes D1, D2 flow out the surge currents to clamp the voltages at the external connection terminal 2 in positive and negative going directions. Accordingly, the voltage at the terminal 2 is limited to predetermined level to protect the circuit 3 so as to eliminate the deterioration and breakdown of the IC.
JP3723779A 1979-03-28 1979-03-28 Surge preventive circuit for bipolar integrated circuit Pending JPS55128859A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3723779A JPS55128859A (en) 1979-03-28 1979-03-28 Surge preventive circuit for bipolar integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3723779A JPS55128859A (en) 1979-03-28 1979-03-28 Surge preventive circuit for bipolar integrated circuit

Publications (1)

Publication Number Publication Date
JPS55128859A true JPS55128859A (en) 1980-10-06

Family

ID=12491992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3723779A Pending JPS55128859A (en) 1979-03-28 1979-03-28 Surge preventive circuit for bipolar integrated circuit

Country Status (1)

Country Link
JP (1) JPS55128859A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139957A (en) * 1981-02-24 1982-08-30 Mitsubishi Electric Corp Protective diode of semiconductor integrated circuit device
JPS5879745A (en) * 1981-11-05 1983-05-13 Nec Corp Protective device for semiconductor integrated circuit
US6388857B1 (en) 1999-07-23 2002-05-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor circuit device with improved surge resistance

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139957A (en) * 1981-02-24 1982-08-30 Mitsubishi Electric Corp Protective diode of semiconductor integrated circuit device
JPS5879745A (en) * 1981-11-05 1983-05-13 Nec Corp Protective device for semiconductor integrated circuit
US6388857B1 (en) 1999-07-23 2002-05-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor circuit device with improved surge resistance
US6521951B2 (en) 1999-07-23 2003-02-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor circuit device with improved surge resistance

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