JPS55166951A - Surge preventive circuit for bipolar integrated circuit - Google Patents

Surge preventive circuit for bipolar integrated circuit

Info

Publication number
JPS55166951A
JPS55166951A JP7531979A JP7531979A JPS55166951A JP S55166951 A JPS55166951 A JP S55166951A JP 7531979 A JP7531979 A JP 7531979A JP 7531979 A JP7531979 A JP 7531979A JP S55166951 A JPS55166951 A JP S55166951A
Authority
JP
Japan
Prior art keywords
electrode
voltage
diffused region
type diffused
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7531979A
Other languages
Japanese (ja)
Inventor
Hitoshi Ishikawa
Koji Shinomiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7531979A priority Critical patent/JPS55166951A/en
Publication of JPS55166951A publication Critical patent/JPS55166951A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent deterioration and breakdown of a semiconductor device by providing an electric protective portion in a bipolar integrated circuit. CONSTITUTION:Positive voltage is applied to a connecting electrode 18, and zero voltage is applied to a grounding electrode 24. A current flows from the electrode 18 through a P-type diffused region 11 and base electrode of a transistor in the next stage, and a current multiplied by hFE times flows from the collector electrode 21 to the emitter electrode 22. Even if positive excessive voltage is applied to the connecting electrode, since there exists a current route of the P-type diffused region 11-epitaxial layer 2 N-type diffused region 14 power supply terminal connecting electrode 19, no positive excessiv voltage is applied to the base electrode 20. Since there exists a current route of grounding electrode 24 P-type silicon substrate 1 epitaxial layer 2 N-type diffused region 13 connecting electrode 18, negative excessive voltage is not applied to the base electrode 20.
JP7531979A 1979-06-14 1979-06-14 Surge preventive circuit for bipolar integrated circuit Pending JPS55166951A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7531979A JPS55166951A (en) 1979-06-14 1979-06-14 Surge preventive circuit for bipolar integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7531979A JPS55166951A (en) 1979-06-14 1979-06-14 Surge preventive circuit for bipolar integrated circuit

Publications (1)

Publication Number Publication Date
JPS55166951A true JPS55166951A (en) 1980-12-26

Family

ID=13572812

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7531979A Pending JPS55166951A (en) 1979-06-14 1979-06-14 Surge preventive circuit for bipolar integrated circuit

Country Status (1)

Country Link
JP (1) JPS55166951A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139957A (en) * 1981-02-24 1982-08-30 Mitsubishi Electric Corp Protective diode of semiconductor integrated circuit device
JPS57176754A (en) * 1981-04-23 1982-10-30 Mitsubishi Electric Corp Bipolar integrated circuit device
JP2005286079A (en) * 2004-03-30 2005-10-13 Shindengen Electric Mfg Co Ltd Semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501307A (en) * 1973-05-11 1975-01-08
JPS5212029A (en) * 1975-07-15 1977-01-29 Seiko Instr & Electronics Compact printer for watch
JPS5221779A (en) * 1975-08-13 1977-02-18 Toshiba Corp Bipolar-type semidonductor integrating circuit unit
JPS5338267A (en) * 1976-09-20 1978-04-08 Nippon Precision Circuits Input*output protecting circuit of mos ic
JPS5376677A (en) * 1976-12-17 1978-07-07 Nec Corp Semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS501307A (en) * 1973-05-11 1975-01-08
JPS5212029A (en) * 1975-07-15 1977-01-29 Seiko Instr & Electronics Compact printer for watch
JPS5221779A (en) * 1975-08-13 1977-02-18 Toshiba Corp Bipolar-type semidonductor integrating circuit unit
JPS5338267A (en) * 1976-09-20 1978-04-08 Nippon Precision Circuits Input*output protecting circuit of mos ic
JPS5376677A (en) * 1976-12-17 1978-07-07 Nec Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139957A (en) * 1981-02-24 1982-08-30 Mitsubishi Electric Corp Protective diode of semiconductor integrated circuit device
JPS57176754A (en) * 1981-04-23 1982-10-30 Mitsubishi Electric Corp Bipolar integrated circuit device
JP2005286079A (en) * 2004-03-30 2005-10-13 Shindengen Electric Mfg Co Ltd Semiconductor device
JP4726428B2 (en) * 2004-03-30 2011-07-20 新電元工業株式会社 Semiconductor device

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