JPS6454765A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6454765A
JPS6454765A JP62210035A JP21003587A JPS6454765A JP S6454765 A JPS6454765 A JP S6454765A JP 62210035 A JP62210035 A JP 62210035A JP 21003587 A JP21003587 A JP 21003587A JP S6454765 A JPS6454765 A JP S6454765A
Authority
JP
Japan
Prior art keywords
type
igbt
diode
diffused layer
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62210035A
Other languages
Japanese (ja)
Inventor
Shuichi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62210035A priority Critical patent/JPS6454765A/en
Publication of JPS6454765A publication Critical patent/JPS6454765A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Control Of Direct Current Motors (AREA)

Abstract

PURPOSE:To reduce the size and to simplify a semiconductor device by containing a commutation diode in a conductivity modulation type MOSFET (IGBT). CONSTITUTION:A collector of an n<+> type diffused layer, a base 3 of a p-type diffused layer an emitter 4 of an n<+> type diffused layer, and a polysilicon insulating electrode 4 are provided on an n<-> type Si semiconductor substrate 1 to form a composite power device IGBT of monolithic structure. A plurality of p-type layers 6 are substantially formed in a monolithic structure between the collector 2 and the emitter 4. When a collector current of a normal operation is of positive voltage, the diode does not operate, while the diode operates at the time of abnormal operation. Accordingly, its configuration is simplified to reduce the size of the IGBT without necessity of externally connecting a commutation diode.
JP62210035A 1987-08-26 1987-08-26 Semiconductor device Pending JPS6454765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62210035A JPS6454765A (en) 1987-08-26 1987-08-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62210035A JPS6454765A (en) 1987-08-26 1987-08-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6454765A true JPS6454765A (en) 1989-03-02

Family

ID=16582728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62210035A Pending JPS6454765A (en) 1987-08-26 1987-08-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6454765A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5719412A (en) * 1993-04-02 1998-02-17 Nippondenso Co., Ltd Insulated gate bipolar transistor
US5723882A (en) * 1994-03-10 1998-03-03 Nippondenso Co., Ltd. Insulated gate field effect transistor having guard ring regions
US6452219B1 (en) 1996-09-11 2002-09-17 Denso Corporation Insulated gate bipolar transistor and method of fabricating the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5719412A (en) * 1993-04-02 1998-02-17 Nippondenso Co., Ltd Insulated gate bipolar transistor
US5723882A (en) * 1994-03-10 1998-03-03 Nippondenso Co., Ltd. Insulated gate field effect transistor having guard ring regions
US6452219B1 (en) 1996-09-11 2002-09-17 Denso Corporation Insulated gate bipolar transistor and method of fabricating the same

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