JPS56162866A - Composite thyristor - Google Patents

Composite thyristor

Info

Publication number
JPS56162866A
JPS56162866A JP6589380A JP6589380A JPS56162866A JP S56162866 A JPS56162866 A JP S56162866A JP 6589380 A JP6589380 A JP 6589380A JP 6589380 A JP6589380 A JP 6589380A JP S56162866 A JPS56162866 A JP S56162866A
Authority
JP
Japan
Prior art keywords
thyristor
composite
diode
series
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6589380A
Other languages
Japanese (ja)
Inventor
Sozaburo Hotta
Masato Ito
Naohiro Shimizu
Makoto Iguchi
Kimihiro Muraoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Electric Manufacturing Ltd
Original Assignee
Toyo Electric Manufacturing Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Electric Manufacturing Ltd filed Critical Toyo Electric Manufacturing Ltd
Priority to JP6589380A priority Critical patent/JPS56162866A/en
Publication of JPS56162866A publication Critical patent/JPS56162866A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10156—Shape being other than a cuboid at the periphery

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain a composite thyristor which is not affected by the influence of the turn-off characteristics of diodes connected in series by forming a diode part at the reverse conductive thyristor of the composite thyristor formed by connecting diodes in series. CONSTITUTION:A composite thyristor 1 is formed by integrating reverse conductive thyristor wafer 2' having a P-N-I-P-N junction a diode wafer 3 having a P-N junction, an anode electrode 24 and a cathode electrode 24'. The thyristor 2' is formed by forming a P type layer 8 and an N<+> type layer 6 on an N type substrate 5 and selectively diffusing a P type emitter 7 and an N type emitter 9. Planar displacement is formed in the emitters 9 and 7 as an isolation band 26 to form a thyristor part 27 and a diode part 28. Thus, a composite thyristor which is not affected by the influence of the turn-off characteristics of the diode wafers 3' connected in series can be obtained.
JP6589380A 1980-05-20 1980-05-20 Composite thyristor Pending JPS56162866A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6589380A JPS56162866A (en) 1980-05-20 1980-05-20 Composite thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6589380A JPS56162866A (en) 1980-05-20 1980-05-20 Composite thyristor

Publications (1)

Publication Number Publication Date
JPS56162866A true JPS56162866A (en) 1981-12-15

Family

ID=13300091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6589380A Pending JPS56162866A (en) 1980-05-20 1980-05-20 Composite thyristor

Country Status (1)

Country Link
JP (1) JPS56162866A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5604136A (en) * 1995-05-26 1997-02-18 National Science Council Method of manufacturing light converter with amorphous-silicon pin heterojunction diode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS498186A (en) * 1972-05-10 1974-01-24
JPS4975286A (en) * 1972-11-24 1974-07-19

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS498186A (en) * 1972-05-10 1974-01-24
JPS4975286A (en) * 1972-11-24 1974-07-19

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5604136A (en) * 1995-05-26 1997-02-18 National Science Council Method of manufacturing light converter with amorphous-silicon pin heterojunction diode

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