JPS5736875A - Semiconductor photoelectric converter - Google Patents

Semiconductor photoelectric converter

Info

Publication number
JPS5736875A
JPS5736875A JP11133980A JP11133980A JPS5736875A JP S5736875 A JPS5736875 A JP S5736875A JP 11133980 A JP11133980 A JP 11133980A JP 11133980 A JP11133980 A JP 11133980A JP S5736875 A JPS5736875 A JP S5736875A
Authority
JP
Japan
Prior art keywords
electrode
semiconductor
semiconductor region
photoelectric converter
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11133980A
Other languages
Japanese (ja)
Other versions
JPS6244712B2 (en
Inventor
Eiichi Yamaguchi
Takeshi Kobayashi
Yoshitaka Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11133980A priority Critical patent/JPS5736875A/en
Publication of JPS5736875A publication Critical patent/JPS5736875A/en
Publication of JPS6244712B2 publication Critical patent/JPS6244712B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain an excellent photoelectric converting function characteristics of a semiconductor photoelectric converter by forming the semiconductor region side of an electrode as an opaque electrode. CONSTITUTION:An electrode 9 arranged via an insulating layer 8 on a semiconductor region 7 as a region between the semiconductor regions 3 and 4 of a semiconductor substrate 1 is formed of opaque electrode parts 9a, 9b and a light transmitting electrode part 9c disposed between the electrode parts 9a and 9b. In this case, the electrode parts 9a, 9b have the lengths L1, L2 at the electrode part 9c side from the positions corresponding to the ends of the semiconductor region 7 side of the P-N junctions 5 and 6 longer than the diffusing length of the minority carrier produced on the basis of the light 15 in the semiconductor region 7.
JP11133980A 1980-08-13 1980-08-13 Semiconductor photoelectric converter Granted JPS5736875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11133980A JPS5736875A (en) 1980-08-13 1980-08-13 Semiconductor photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11133980A JPS5736875A (en) 1980-08-13 1980-08-13 Semiconductor photoelectric converter

Publications (2)

Publication Number Publication Date
JPS5736875A true JPS5736875A (en) 1982-02-27
JPS6244712B2 JPS6244712B2 (en) 1987-09-22

Family

ID=14558682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11133980A Granted JPS5736875A (en) 1980-08-13 1980-08-13 Semiconductor photoelectric converter

Country Status (1)

Country Link
JP (1) JPS5736875A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60248398A (en) * 1984-04-07 1985-12-09 コルブス　ゲ−エムベ−ハ−　ウント　コムパニ　カ−ゲ− Method and device for transporting bookbinding block to conveyance means of bookbinding machine
JP2009065858A (en) * 2007-09-11 2009-04-02 Daiwa Seiko Inc Fishing reel

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60248398A (en) * 1984-04-07 1985-12-09 コルブス　ゲ−エムベ−ハ−　ウント　コムパニ　カ−ゲ− Method and device for transporting bookbinding block to conveyance means of bookbinding machine
JP2009065858A (en) * 2007-09-11 2009-04-02 Daiwa Seiko Inc Fishing reel

Also Published As

Publication number Publication date
JPS6244712B2 (en) 1987-09-22

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