JPS6244712B2 - - Google Patents
Info
- Publication number
- JPS6244712B2 JPS6244712B2 JP55111339A JP11133980A JPS6244712B2 JP S6244712 B2 JPS6244712 B2 JP S6244712B2 JP 55111339 A JP55111339 A JP 55111339A JP 11133980 A JP11133980 A JP 11133980A JP S6244712 B2 JPS6244712 B2 JP S6244712B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- photoelectric conversion
- conversion device
- conductivity type
- semiconductor region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 69
- 238000006243 chemical reaction Methods 0.000 claims description 43
- 239000000969 carrier Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】 本発明は半導体光電変換装置に関する。[Detailed description of the invention] The present invention relates to a semiconductor photoelectric conversion device.
半導体光電変換装置として従来、第１図に示す
如く、例えばＰ型の半導体基板１内の主面２側に
Ｎ型の半導体領域３及び４がそれ等間に夫々PN
接合５及び６を介して半導体基板１による半導体
領域７が形成されるべく形成され、又半導体領域
７の主面２側の面上に透光性を有する絶縁層８を
介して透光性を有する電極９が配され、而して半
導体領域３及び４間に、それ等半導体領域３及び
４に予めオーミツクに附された電極１０及び１１
を介して動作電源１２を負荷１３を通じて接続し
且電極１０及び９間にバイアス用電極１４を電極
９側を正として接続せる状態で、半導体領域７に
電極９及び絶縁層８を通じて電極９側の外部より
光１５を照射せしめた場合、その光の強さに応じ
た電流が負荷１３に供給されるという、光電変換
機能の得られる構成のものが提案されている。 Conventionally, as a semiconductor photoelectric conversion device, as shown in FIG.
A semiconductor region 7 is formed by the semiconductor substrate 1 through the junctions 5 and 6, and a light-transmitting insulating layer 8 is formed on the main surface 2 side of the semiconductor region 7. An electrode 9 is arranged between the semiconductor regions 3 and 4, and electrodes 10 and 11 which have been ohmicly applied to the semiconductor regions 3 and 4 in advance are arranged between the semiconductor regions 3 and 4.
The operating power supply 12 is connected through the load 13 and the bias electrode 14 is connected between the electrodes 10 and 9 with the electrode 9 side being positive. A structure has been proposed that provides a photoelectric conversion function, in which when light 15 is irradiated from the outside, a current corresponding to the intensity of the light is supplied to the load 13.
所で斯る半導体光電変換装置の場合、その半導
体領域７の主面２側に半導体領域３及び４間に延
長せるＮ型の反転層が形成され即ちチヤンネルが
形成されている状態で、そのチヤンネルがそれへ
の光１５の入射により生起する少数キヤリアに応
じた導電度を呈するという機構で上述せる光電変
換機能が得られるものであり、従つて第１図にて
上述せる従来の半導体光電変換装置は所謂MIS型
半導体光電変換装置と称し得るものであるが、そ
の光電変換機能が上述せる機構で得られるので、
その光電変換機能が、PN又はPIN接合を有し、
それを横切つて光の強さに応じた起電力を生ぜし
めるという機構で光電変換機能を得る様になされ
た所謂PN又はPIN接合型の半導体光電変換装置
の場合に比し、高速応答性を以つて得られる等、
PN又はPIN接合型半導体光電変換装置の場合に
比し優れた特性を以つて得られるものである。然
し乍ら第１図にて上述せる半導体光電変換装置の
場合、電極９がその全域に亘つて透光性を有する
ので、光１５がPN接合５及び６の半導体領域７
側の部５ａ及び６ａにも入射し、又半導体領域７
に光１５の照射に基き生起せる少数キヤリアが
PN接合５及び６の部５ａ及び６ａに拡散するの
で、PN接合５及び６の夫々を横切つて光１５の
強さに応じた起電力が生じ、この為MIS型半導体
光電変換装置の構成を有して前述せる機構で得ら
れる光電変換機能がPN又はPIN接合型半導体光
電変換装置で得られると同様の光電変換機能に影
響されて得られ、依つてこの分MIS型半導体光電
変換装置の構成を有して得られる光電変換機能が
所期の優れた特性を以つて得られないという欠点
を有していた。 In the case of such a semiconductor photoelectric conversion device, an N-type inversion layer extending between the semiconductor regions 3 and 4 is formed on the main surface 2 side of the semiconductor region 7, that is, a channel is formed. The above-mentioned photoelectric conversion function is obtained through a mechanism in which the semiconductor photoelectric conversion device exhibits a conductivity corresponding to the minority carriers generated by the incidence of light 15 on it, and therefore, the conventional semiconductor photoelectric conversion device described above in FIG. can be called a so-called MIS type semiconductor photoelectric conversion device, and its photoelectric conversion function is obtained by the mechanism described above.
Its photoelectric conversion function has a PN or PIN junction,
Compared to the so-called PN or PIN junction type semiconductor photoelectric conversion device, which obtains the photoelectric conversion function by generating an electromotive force according to the intensity of light across it, it has a high-speed response. etc. obtained by
This provides superior characteristics compared to PN or PIN junction type semiconductor photoelectric conversion devices. However, in the case of the semiconductor photoelectric conversion device described above in FIG.
It also enters the side parts 5a and 6a, and also the semiconductor region 7.
The minority carriers that can be generated based on the irradiation of light 15 are
Since the light is diffused into the parts 5a and 6a of the PN junctions 5 and 6, an electromotive force corresponding to the intensity of the light 15 is generated across the PN junctions 5 and 6, respectively. The photoelectric conversion function obtained by the above-mentioned mechanism is obtained by being influenced by the same photoelectric conversion function as that obtained by the PN or PIN junction type semiconductor photoelectric conversion device, and therefore the configuration of the MIS type semiconductor photoelectric conversion device is The drawback is that the photoelectric conversion function obtained with this method cannot have the desired excellent characteristics.
依つて本発明は第１図にて上述せる従来の半導
体光電変換装置を基礎とするも、上述せる欠点の
ない新規な半導体光電変換装置を提案せんとする
もので、以下詳述する所より明らかとなるであろ
う。 Therefore, although the present invention is based on the conventional semiconductor photoelectric conversion device shown in FIG. It will be.
第２図は本発明による半導体光電変換装置の一
例を示し、第１図との対応部分には同一符号を附
し詳細説明はこれを省略するも、第１図にて上述
せる構成に於て、その半導体基板１の半導体領域
３及び４間の領域たる半導体領域７上に絶縁層８
を介して配された電極９が、その全域に亘つて透
光性であるに代え、半導体領域３及び４側の不透
光性電極部９ａ及び９ｂとそれ等不透光性電極部
９ａ及び９ｂ間の透光性電極部９ｃとよりなり、
そしてこの場合、不透光性電極部９ａ及び９ｂが
それ等のPN接合５及び６の半導体領域７側の端
に対応する位置より透光性電極部９ｃ側の長さ
L1及びL2をして、半導体領域７内に光１５の照
射に基き生起する少数キヤリアの拡散長以上の長
さを有する事を除いては第１図の場合と同様の構
成を有する。尚斯る電極９は、絶縁層８上に導電
性金属例えば金でなる導電性層を100Å程度の如
く比較的薄く蒸着により附し、次でその導電性層
上の半導体領域３及び４側にそれと同じ導電性金
属層を3000Å程度の如く比較的厚く蒸着により附
すことにより形成し得る。 FIG. 2 shows an example of a semiconductor photoelectric conversion device according to the present invention. Parts corresponding to those in FIG. , an insulating layer 8 is formed on the semiconductor region 7 which is the region between the semiconductor regions 3 and 4 of the semiconductor substrate 1.
The electrodes 9 disposed through the electrodes are translucent over the entire area, but the electrodes 9a and 9b on the semiconductor regions 3 and 4 side and the non-transparent electrode parts 9a and 9b are translucent. It consists of a translucent electrode part 9c between 9b,
In this case, the length of the non-transparent electrode parts 9a and 9b from the position corresponding to the end of the semiconductor region 7 side of the PN junctions 5 and 6 on the transparent electrode part 9c side.
The structure is similar to that of FIG. 1, except that L 1 and L 2 have a length equal to or longer than the diffusion length of minority carriers generated in the semiconductor region 7 upon irradiation of the light 15. The electrode 9 is formed by depositing a conductive layer made of a conductive metal, such as gold, on the insulating layer 8 to a relatively thin thickness of about 100 Å, and then depositing a conductive layer on the semiconductor regions 3 and 4 on the conductive layer. The same conductive metal layer can be formed by vapor deposition to a relatively thick thickness, such as on the order of 3000 Å.
以上が本発明による半導体光電変換装置の一実
施例構成であるが、斯る構成によれば、それが上
述せる事項を除いては第１図に上述せる従来の半
導体光電変換装置と同様の構成を有するので、第
１図にて前述せる従来の半導体光電変換装置の場
合と同様に、半導体領域３及び４間に電極１０及
び１１を介して動作電源１２を負荷１３を通じて
接続し且電極１０及び９間にバイアス用電極１４
を接続せる状態で、半導体領域７に光１５を電極
９及び絶縁層８を通じて照射した場合、半導体領
域７の主面２側にチヤンネルが形成されている状
態で、そのチヤンネルがそれへの光１５の入射に
より生起する少数キヤリアに応じた導電度を呈す
るという機構で光電変換機能が得られること明ら
かであり、又斯る光電変換機能の得られる本発明
による半導体光電変換装置は第１図にて上述せる
従来の半導体光電変換装置の場合と同様に所謂
MIS型半導体光電変換装置と称し得ること明らか
である。 The above is an embodiment of the configuration of a semiconductor photoelectric conversion device according to the present invention. According to this configuration, it has the same configuration as the conventional semiconductor photoelectric conversion device shown in FIG. 1, except for the matters mentioned above. Therefore, as in the case of the conventional semiconductor photoelectric conversion device described above in FIG. Bias electrode 14 between 9
When the semiconductor region 7 is irradiated with light 15 through the electrode 9 and the insulating layer 8 with the semiconductor region 7 connected to the It is clear that a photoelectric conversion function can be obtained by a mechanism that exhibits conductivity according to minority carriers generated by the incidence of As in the case of the conventional semiconductor photoelectric conversion device mentioned above, the so-called
It is clear that it can be called an MIS type semiconductor photoelectric conversion device.
然し乍ら本発明による半導体光電変換装置の場
合、電極９の半導体領域３及び４側が不透光性電
極部９ａ及び９ｂであることにより、光１５が
PN接合５及び６の半導体領域７側の部５ａ及び
６ａに入射することがなく、又電極９の不透光性
電極部９ａ及び９ｂが、そのPN接合５及び６の
半導体領域７側の端に対応する位置より透光性電
極部９ｃ側の長さL1及びL2をして、半導体領域
７内に光１５の照射に基き生起する少数キヤリア
の拡散長以上の長さを有することにより、半導体
領域７内に光１５の照射に基き生起する少数キヤ
リアがPN接合５及び６の部５ａ及び６ａに拡散
することが実質的になく、依つて、第１図にて上
述せる従来の半導体光電変換装置の場合の如く
に、PN接合５及び６の夫々を横切つて光１５の
強さに応じた起電力が生ずるということが実質的
にないものである。 However, in the case of the semiconductor photoelectric conversion device according to the present invention, since the semiconductor regions 3 and 4 sides of the electrode 9 are non-transparent electrode parts 9a and 9b, the light 15 is not transmitted.
It does not enter the parts 5a and 6a of the PN junctions 5 and 6 on the semiconductor region 7 side, and the non-transparent electrode parts 9a and 9b of the electrodes 9 do not enter the ends of the PN junctions 5 and 6 on the semiconductor region 7 side. By making the lengths L 1 and L 2 from the position corresponding to the transparent electrode part 9c side equal to or longer than the diffusion length of the minority carriers generated in the semiconductor region 7 due to the irradiation of the light 15. , the minority carriers generated in the semiconductor region 7 due to the irradiation of the light 15 are not substantially diffused into the parts 5a and 6a of the PN junctions 5 and 6, and therefore, the conventional semiconductor described above in FIG. Unlike in the case of a photoelectric conversion device, there is substantially no possibility that an electromotive force is generated across each of the PN junctions 5 and 6 in accordance with the intensity of the light 15.
この為第２図に示す本発明による半導体光電変
換装置の場合、MIS型半導体光電変換装置の構成
を有して前述せる機構で得られる光電変換機能
が、第１図にて上述せる従来の半導体光電変換装
置の場合の如くにPN又はPIN接合型半導体光電
変換装置で得られると同様の光電変換機能に影響
されて得られるということがなく、依つてMIS型
半導体光電変換装置の構成を有して得られる光電
変換機能が所期の優れた特性を以つて得られると
いう大なる特徴を有するものである。因みに半導
体基板１がシリコンでなり、半導体領域３及び４
間の半導体領域７が15μｍの長さを有し、絶縁層
８がSiO2でなり、電極９が前述せる具体例を以
つて構成されてなる構成を有する場合に於て、電
源１２の電圧ＶDを2V、光１５の波長を6328Åと
せる状態で、電源１４の電圧Ｖgに対する光電流
増幅率Ｍの関係を測定した結果、第３図に示す結
果が得られた。これよりしても本発明による半導
体光電変換装置によれば、優れた特性を以つて光
電変換機能の得られることが明らかであろう。 Therefore, in the case of the semiconductor photoelectric conversion device according to the present invention shown in FIG. 2, the photoelectric conversion function obtained by the above-mentioned mechanism with the configuration of the MIS type semiconductor photoelectric conversion device is different from that of the conventional semiconductor photoelectric conversion device shown in FIG. Unlike a photoelectric conversion device, the photoelectric conversion function obtained by a PN or PIN junction type semiconductor photoelectric conversion device is not affected and obtained, and it has the configuration of an MIS type semiconductor photoelectric conversion device. It has the great feature that the photoelectric conversion function obtained by the method can be obtained with the expected excellent characteristics. Incidentally, the semiconductor substrate 1 is made of silicon, and the semiconductor regions 3 and 4 are
In the case where the semiconductor region 7 between has a length of 15 μm, the insulating layer 8 is made of SiO 2 , and the electrode 9 is configured according to the specific example described above, the voltage V of the power source 12 The relationship between the photocurrent amplification factor M and the voltage V g of the power source 14 was measured with D being 2 V and the wavelength of the light 15 being 6328 Å, and the results shown in FIG. 3 were obtained. From this, it is clear that the semiconductor photoelectric conversion device according to the present invention can provide a photoelectric conversion function with excellent characteristics.
尚上述に於ては本発明の一例を示したに留ま
り、上述せる構成に於てその半導体基板１をＮ
型、半導体領域３及び４をＰ型とすることも出
来、その他本発明の精神を脱することなしに種々
の変型変更をなし得るであろう。 It should be noted that the above description is merely an example of the present invention, and the semiconductor substrate 1 in the above-mentioned configuration is
The semiconductor regions 3 and 4 could be of P type, and various other modifications could be made without departing from the spirit of the invention.
第１図は従来の半導体光電変換装置を示す略線
的断面図、第２図は本発明による半導体光電変換
装置の一例を示す略線的断面図、第３図はその説
明に供する特性曲線図である。
図中１は半導体基板、２は主面、３，４及び７
は半導体領域、５及び６はPN接合、８は絶縁
層、９は電極、９ａ，９ｂは不透光性電極部、９
ｃは透光性電極部を夫々示す。
FIG. 1 is a schematic cross-sectional view showing a conventional semiconductor photoelectric conversion device, FIG. 2 is a schematic cross-sectional view showing an example of a semiconductor photoelectric conversion device according to the present invention, and FIG. 3 is a characteristic curve diagram for explaining the device. It is. In the figure, 1 is the semiconductor substrate, 2 is the main surface, 3, 4 and 7
are semiconductor regions, 5 and 6 are PN junctions, 8 is an insulating layer, 9 is an electrode, 9a and 9b are non-transparent electrode parts, 9
c indicates a translucent electrode portion, respectively.
Claims (1)
に第１の導電型とは逆の第２の導電型を有する第
１及び第２の半導体領域がそれ等間に夫々第１及
び第２のPN接合を介して上記半導体基板による
第３の半導体領域を形成すべく形成され、上記第
３の半導体領域の上記主面側の面上に透光性を有
する絶縁層を介して電極が配され、該電極が上記
第１及び第２の半導体領域側の第１及び第２の不
透光性電極部と該第１及び第２の不透光性電極部
間の透光性電極部とよりなり、上記第１及び第２
の不透光性電極部が、それ等の上記第１及び第２
のPN接合の上記第３の半導体領域側の端に対応
する位置より上記透光性電極部側の長さをして、
上記第３の半導体領域に光照射に基き生起する少
数キヤリアの拡散長以上の長さを有する事を特徴
とする半導体光電変換装置。1 First and second semiconductor regions having a second conductivity type opposite to the first conductivity type are provided on the main surface side of a semiconductor substrate having a first conductivity type, and first and second semiconductor regions having a second conductivity type opposite to the first conductivity type are disposed between the first and second semiconductor regions, respectively. A third semiconductor region is formed by the semiconductor substrate through a PN junction of 2, and an electrode is formed on the main surface side of the third semiconductor region through a light-transmitting insulating layer. and the electrode includes first and second non-transparent electrode portions on the side of the first and second semiconductor regions and a translucent electrode portion between the first and second non-transparent electrode portions. Therefore, the above first and second
The non-transparent electrode portions are connected to the first and second electrode portions.
The length from the position corresponding to the end of the PN junction on the third semiconductor region side to the transparent electrode part side,
A semiconductor photoelectric conversion device characterized in that the third semiconductor region has a length equal to or longer than the diffusion length of minority carriers generated upon light irradiation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11133980A JPS5736875A (en) | 1980-08-13 | 1980-08-13 | Semiconductor photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11133980A JPS5736875A (en) | 1980-08-13 | 1980-08-13 | Semiconductor photoelectric converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5736875A JPS5736875A (en) | 1982-02-27 |
| JPS6244712B2 true JPS6244712B2 (en) | 1987-09-22 |
Family
ID=14558682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11133980A Granted JPS5736875A (en) | 1980-08-13 | 1980-08-13 | Semiconductor photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5736875A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3413222C2 (en) * | 1984-04-07 | 1995-02-09 | Kolbus Gmbh & Co Kg | Method for transferring book blocks into the transport means of a book binding machine and device for carrying out the method |
| JP2009065858A (en) * | 2007-09-11 | 2009-04-02 | Daiwa Seiko Inc | Fishing reel |
-
1980
- 1980-08-13 JP JP11133980A patent/JPS5736875A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5736875A (en) | 1982-02-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH022692A (en) | Infrared detecting trenched schottky barrier photodiode | |
| JPH05506332A (en) | Semiconductor device with silicon layer | |
| US4144094A (en) | Radiation responsive current generating cell and method of forming same | |
| JP3646940B2 (en) | Solar cell | |
| US4482807A (en) | Imaging devices and systems | |
| US4244750A (en) | Photovoltaic generator | |
| JPH03185879A (en) | Photoelectric converter | |
| US4383267A (en) | Avalanche photodiode and method of making same | |
| JPS5812377A (en) | High speed photoelectric detecting element and method of producing same | |
| US4525593A (en) | Inverted, optically enhanced solar cell | |
| JP2002026366A (en) | Semiconductor device | |
| JPS6244712B2 (en) | ||
| KR20040049123A (en) | Pin photo diode | |
| JPS6231834B2 (en) | ||
| JPH0818091A (en) | Semiconductor photoelectric transducer with plurality of photodiodes | |
| JPH01216581A (en) | Semiconductor device | |
| KR100237183B1 (en) | Metal-semiconductor photoelectronic device | |
| GB2149572A (en) | Semiconductor diode lasers | |
| JP2583032B2 (en) | Light receiving element | |
| JPS5913724B2 (en) | light control circuit | |
| JPH03132080A (en) | Photovoltaic device | |
| JPS61185979A (en) | Integrated photoelectric conversion element | |
| JPH09186355A (en) | Photodetector | |
| JPS6015005B2 (en) | Photovoltaic infrared sensing element | |
| JPS6140148B2 (en) |